Electrical characterization of memory-cell structures employing ultra-thin Al2O3 film as storage node

European Solid-State Device Research Conference

Volumn , Issue , 2001, Pages 139-142

  Fernandes, A ^a   De Salvo, B ^a   Masson, P ^c   Pananakakis, G ^b   Ghibaudo, G ^b   Baron, T ^c   Buffet, N ^a   Mariolle, D ^a   Guillaumot, B ^d  

^a CEA LETI   (France)

^b Grenoble INP Phelma   (France)

^c IRISA   (France)

^d STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CHARACTERIZATION; STORAGE NODES; ULTRA-THIN;

EID: 84907569058     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2001.195220     Document Type: Conference Paper

References (17)

1. K. Yoshikawa, Proc. of ESSDERC'00, p. 72 (2000).
2. H. I Hanafi et al., IEEE Trans. on El. Dev., Vol 43, n9, p. 1553 (1996).
3. B. Eitan et al., SSDM'99, p. 522 (1999).
4. H. C. Wann et al., IEEE El. Dev. Lett., Vol. 16, n11, p. 491 (1995).
5. F. Libsch et al., IEEE El. Dev. Lett., p. 2371 (1987).
6. B. DeSalvo et al., to be published on IEEE Trans. on El. Dev., July 2001.
7. W. H. Lee et al., VLSI Symp. Tech. Symp., p. 117 (1997).
8. A. Chin et al., VLSI Symp. Tech. Symp., p. 16 (2000).
9. D. A. Buchanan et al., Tech. Dig. of IEDM, p. 223 (2000).
10. Park et al., Tech. Dig. of IEDM, p. 46 (2000).
11. Y. K. Kim et al., VLSI Tech. Symp., p. 52 (1998).
12. T. Baron et al., App. Surf. Science, 164, p. 29 (2000).
13. B. DeSalvo et al., Microstr. and Superl., Vol. 28, n5-6, p. 339 (2000).
14. B. DeSalvo et al., Proc. of ESSDERC'00, p. 280 (2000).
15. B. DeSalvo et al., Microel. & Rel., Vol. 40, p. 863, 2000
16. B. De Salvo et al., Sol. State El., to be published (2001).
17. R. Kiès et al., Sol. State El., Vol 41, p. 1041 (1997).