Monte Carlo simulation of electron transport in doped silicon

Proceedings of the Conference on High Performance Computing on the Information Superhighway, HPC Asia'97

Volumn , Issue , 1997, Pages 444-449

  Kaiblinger Grujin, G ^a   Kosina, H ^a   Selberherr, S ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; MONTE CARLO METHODS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

THOMAS FERMI THEORY;

SEMICONDUCTING SILICON;

EID: 0030683716     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (20)