A comparison of different multiple-crystal diffractometer arrangements to measure the reflection curve of SiGe layers on Si substrates

Crystal Research and Technology

Volumn 31, Issue 4, 1996, Pages 529-537

  Zaumseil, P ^a  

^a Institute of Semiconductor Physics   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DIFFRACTOMETERS; MONOCHROMATORS; OPTICAL COLLIMATORS; OPTICAL VARIABLES MEASUREMENT; SILICON; SUBSTRATES;

DOUBLE CRYSTAL DIFFRACTOMETER; HETEROEPITAXIAL STRUCTURE; MULTIPLE CRYSTAL DIFFRACTOMETER; TRIPLE CRYSTAL DIFFRACTOMETER;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0029708741     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.2170310419     Document Type: Article

References (5)

1. CEMBALI, F., SERVIDORI, M., GABILLI, E., LOTTI, R.: phys. stat. sol. (a) 87 (1985) 225
2. IIDA, A., KOHRA, K.: phys. stat. sol. (a) 51 (1979) 533
3. PINSKER, Z. G.: Dynamical Scattering of X-rays in Crystals. Springer Verlag, Berlin, Heidelberg, New York 1978
4. ZAUMSEIL, P., WINTER, U.: phys. stat. sol. (a) 70 (1982) 497
5. ZAUMSEIL, P.: phys. stat. sol. (a) 91 (1985) K31