Carbon kagome lattice and orbital-frustration-induced metal-insulator transition for optoelectronics

Physical Review Letters

Volumn 113, Issue 8, 2014, Pages

  Chen, Yuanping ^a,b   Sun, Y Y ^a   Wang, H ^a   West, D ^a   Xie, Yuee ^b   Zhong, J ^b   Meunier, V ^a   Cohen, Marvin L ^c   Zhang, S B ^a  

^a Rensselaer Polytechnic Institute   (United States)

^b XIANGTAN UNIVERSITY   (China)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRONIC PROPERTIES; SEMICONDUCTOR INSULATOR BOUNDARIES;

BAND EDGE STATE; DIRECT-GAP SEMICONDUCTOR; EFFECTIVE MASS; ELEMENTAL CARBON; ELEMENTAL SEMICONDUCTORS; FIRST-PRINCIPLES CALCULATION; INTRINSIC PROPERTY; ORBITAL HYBRIDIZATION;

CARBON;

EID: 84907342976     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.113.085501     Document Type: Article

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