SCOPUS 정보 검색 플랫폼

Volumn 40, Issue 78, 2014, Pages 41219-41227

Band gap engineering design for construction of energy-levels well-matched semiconductor heterojunction with enhanced visible-light-driven photocatalytic activity

(4) Huang, Hongwei a Wang, Shuobo a Zhang, Yihe a Chu, Paul K b

a CHINA UNIVERSITY OF GEOSCIENCES (China)

b CITY UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; ENERGY GAP; HETEROJUNCTIONS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LIGHT; OPTICAL PROPERTIES; PHOTOCATALYSIS; PHOTOELECTRON SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION;

INDIVIDUAL COMPONENTS; PHOTOCATALYTIC ACTIVITIES; PHOTOCURRENT GENERATIONS; PHOTOELECTROCHEMICAL MEASUREMENTS; PHOTOGENERATED ELECTRONS; PHOTOLUMINESCENCE SPECTRUM; SEMICONDUCTOR HETEROJUNCTIONS; UV-VIS DIFFUSE REFLECTANCE SPECTRUM;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84907192992 PISSN: None EISSN: 20462069 Source Type: Journal
DOI: 10.1039/c4ra05708b Document Type: Article

Times cited : (42)

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