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1
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84864851300
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Experimental demonstration of 1200V SiC-SBDs with lower forward voltage drop at high temperature
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T u-P-27,September
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T. Tsuji, A. Kinoshita, N. Iwamuro, K. Fukuda, T. Tsuyuki, and H. Kimura, "Experimental demonstration of 1200V SiC-SBDs with lower forward voltage drop at high temperature," Proceedings of ICSCRM 2011,T u-P-27,September 2011,p p. 205-208.
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(2011)
Proceedings of ICSCRM 2011
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Tsuji, T.1
Kinoshita, A.2
Iwamuro, N.3
Fukuda, K.4
Tsuyuki, T.5
Kimura, H.6
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2
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84864844228
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High performance SiC-IEMOSFET/SBD module
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September
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S. Harada, Y. Hoshi, Y. Harada, T. Tsuji, A. Kinoshita, M. Okamoto, Y. Makifuchi, Y. Kawada, K. Imamura, M. Gotoh, T. Tawara, S. Nakamata, T. Sakai, F. Imai, N. Ohse, M. Ryo, A. Tanaka, K. Tezuka, T. Tsuyuki, S. Shimizu, N. Iwamuro, Y. Sakai, H. Kimura, K. Fukuda, and H. Okumura, "High performance SiC-IEMOSFET/SBD module," Proceedings of ICSCRM2011, MO-3A-l, September, 2011, pp. 52-57.
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(2011)
Proceedings of ICSCRM2011, MO-3A-l
, pp. 52-57
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Harada, S.1
Hoshi, Y.2
Harada, Y.3
Tsuji, T.4
Kinoshita, A.5
Okamoto, M.6
Makifuchi, Y.7
Kawada, Y.8
Imamura, K.9
Gotoh, M.10
Tawara, T.11
Nakamata, S.12
Sakai, T.13
Imai, F.14
Ohse, N.15
Ryo, M.16
Tanaka, A.17
Tezuka, K.18
Tsuyuki, T.19
Shimizu, S.20
Iwamuro, N.21
Sakai, Y.22
Kimura, H.23
Fukuda, K.24
Okumura, H.25
more..
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3
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77953683419
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GaN power transistors on si substrates for switching applications
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July
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N. Ikeda, Y. Niiyama, H. Kambayashi, Y. Sato, T. Nomura, S. Kato, and S. Yoshida, " GaN Power Transistors on Si Substrates for Switching Applications," Proceedings of the IEEE, vo1.98, July 2010, pp. 1151-1161.
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(2010)
Proceedings of the IEEE
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, pp. 1151-1161
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Ikeda, N.1
Niiyama, Y.2
Kambayashi, H.3
Sato, Y.4
Nomura, T.5
Kato, S.6
Yoshida, S.7
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4
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84867366969
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Characteristics of the power electronics equIPMents applying the SiC power devices
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Bali, 3-5 July
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H. Mine, Y. Matsumoto, R. Yamada, K. Mino, H. Kimura, Y. Kondo, Y. Ikeda, "Characteristics of the power electronics equIPMents applying the SiC power devices " International Conference on Power Engineering and Renewable Energy (ICPERE), Bali, 3-5 July, 2012, pp. 1-6.
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(2012)
International Conference on Power Engineering and Renewable Energy (ICPERE)
, pp. 1-6
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Mine, H.1
Matsumoto, Y.2
Yamada, R.3
Mino, K.4
Kimura, H.5
Kondo, Y.6
Ikeda, Y.7
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5
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84860196740
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Investigation on wirebond-iess power module structure with highdensity packaging and high reliability
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San Diego, 23-26 May
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Y. Ikeda, Y. Iizuka, Y. Hinata, M. Horio, M. Hori, and Y. Takahashi, "Investigation on Wirebond-Iess Power Module Structure with HighDensity Packaging and High reliability," IEEE 23rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), San Diego, 23-26 May, pp. 272-275, 2011.
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(2011)
IEEE 23rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
, pp. 272-275
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Ikeda, Y.1
Iizuka, Y.2
Hinata, Y.3
Horio, M.4
Hori, M.5
Takahashi, Y.6
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6
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84881103389
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New power module structure with lower thermal impedance and high reliability for sic devices
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May
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M. Horio, N. Nashida, Y. Iizuka, Y. Ikeda, and Y.Takahashi, "New Power Module Structure with Lower Thermal Impedance and High Reliability for SiC Devices," Proceedings of PCIM Europe, May, pp. 229-234,2011.
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(2011)
Proceedings of PCIM Europe
, pp. 229-234
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Horio, M.1
Nashida, N.2
Iizuka, Y.3
Ikeda, Y.4
Takahashi, Y.5
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7
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0019609910
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A new neutral-point-clamped PWM inverter
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A. Nabae, I, Takahashi, H. Akagi, "A New Neutral-Point-Clamped PWM Inverter," IEEE Transactions on Industry Applications, Vol. IA-17, Issue 5, pp. 518-523, 1981.
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(1981)
IEEE Transactions on Industry Applications
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, pp. 518-523
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Nabae, A.1
Takahashi, I.2
Akagi, H.3
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8
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77956542076
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New IGBT modules for advanced neutral-point-clamped 3-level power converters
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Sapporo, June 21-24
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K. Komatsu, M. Yatsu, S. Miyashita, S. Okita, H. Nakazawa, S. Igarashi, Y. Takahashi, Y. Okuma, Y. Seki, and T. Fujihira, "New IGBT modules for advanced neutral-point-clamped 3-level power converters," International Power Electronics Conference (IPEC), Sapporo, June 21-24,pp. 523-527,2010.
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(2010)
International Power Electronics Conference (IPEC)
, pp. 523-527
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Komatsu, K.1
Yatsu, M.2
Miyashita, S.3
Okita, S.4
Nakazawa, H.5
Igarashi, S.6
Takahashi, Y.7
Okuma, Y.8
Seki, Y.9
Fujihira, T.10
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