Current gain of amorphous silicon thin-film transistors above the cutoff frequency

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2014, Pages 273-274

  Rieutort Louis, Warren ^a   Huang, Liechao ^a   Hu, Yingzhe ^a   Sanz Robinson, Josue ^a   Moy, Tiffany ^a   Afsar, Yasmin ^a   Sturm, James C ^a   Verma, Naveen ^a   Wagner, Sigurd ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; AMPLIFICATION; CAPACITANCE; CUTOFF FREQUENCY; ELECTRIC NETWORK TOPOLOGY; SILICON; THIN FILM CIRCUITS;

AMORPHOUS SILICON (A-SI); AMORPHOUS SILICON THIN-FILM TRANSISTOR; CURRENT GAINS; CUT-OFF FREQUENCY (FT); GATE-DRAIN CAPACITANCE; LARGE-AREA ELECTRONICS; OPERATIONAL FREQUENCY; THIN-FILM TRANSISTOR (TFTS);

THIN FILM TRANSISTORS;

EID: 84906535994     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2014.6872403     Document Type: Conference Paper

References (4)

1. L. Huang et al., "A Super-Regenerative Radio on Plastic based on Thin-film Transistors and Antennas on Large, Flexible Sheets for Distributed Communication Links," ISSCC 2013, pp. 458-459.
2. Y. Hu et al., Flexible Solar-Energy Harvesting System on Plastic with Thin-film LC Oscillators Operating Above ft for Inductively-coupled Power Delivery" CICC 2012.
3. K. Cherenack et al. "Self-Aligned Amorphous Silicon Thin-Film Transistors Fabricated on Clear Plastic at 300C", IEEE Trans. on Electron Devices, 2010, Vol 57.
4. D. Thomasson, T. Jackson. "Fully self-aligned tri-layer a-Si:H thin-film transistors with deposited doped contact layer" IEEE Electron Device Lett., vol. 19, no. 4.