Epitaxial growth of Cox Mny Siz (111) thin films in the compositional range around the Heusler alloy Co2 MnSi

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 29, Issue 3, 2011, Pages

  He, Liang ^a   Collins, Brian A ^a   Tsui, Frank ^a   Chu, Yong S ^b  

^a UNIVERSITY OF NORTH CAROLINA   (United States)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON DIOXIDE; DIFFRACTION; EPITAXIAL GROWTH; GERMANIUM; HIGH ENERGY ELECTRON DIFFRACTION; MANGANESE; MANGANESE COMPOUNDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; ROTATION; SILICON; STOICHIOMETRY; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION;

CHEMICAL ORDERING; COMBINATORIAL MOLECULAR BEAM EPITAXY; COMPOSITION SPACE; COMPOSITIONAL RANGE; CRYSTALLOGRAPHIC AXIS; EX SITU; FCC FILMS; FILM-SUBSTRATE INTERFACES; GE SUBSTRATES; HEUSLER; HEUSLER ALLOYS; HIGH QUALITY; HIGH-ENERGY ELECTRON; IN-PLANE; IN-SITU; MBE GROWTH;

COBALT;

EID: 84905949945     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3567419     Document Type: Article

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