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Volumn 26, Issue 29, 2014, Pages 5005-5011

Flexoelectric control of defect formation in ferroelectric epitaxial thin films

(11) Lee, Daesu c,d Jeon, Byung Chul c,d Yoon, Aram d Shin, Yeong Jae c,d Lee, Myang Hwan e Song, Tae Kwon e Bu, Sang Don a Kim, Miyoung d Chung, Jin Seok f Yoon, Jong Gul b Noh, Tae Won c,d

a Chonbuk National University (South Korea)

b Suwon University (South Korea)

c Institute for Basic Science (South Korea)

d Seoul National University (South Korea)

e Changwon National University (South Korea)

f Soongsil University (South Korea)

Author keywords

defect engineering; epitaxial thin film; ferroelectric; flexoelectric; strain gradient

Indexed keywords

ELECTRIC FIELDS; FERROELECTRIC MATERIALS; FERROELECTRICITY; THIN FILMS;

ASSOCIATED ELECTRONICS; DEFECT ENGINEERING; DEFECT FORMATION; EPITAXIAL THIN FILMS; FLEXOELECTRIC; FLEXOELECTRICITY; INTERNAL ELECTRIC FIELDS; STRAIN GRADIENTS;

DEFECTS;

FERRIC ION; FERRITE;

CHEMISTRY; ELECTRICITY; MECHANICS; TEMPERATURE;

ELECTRICITY; FERRIC COMPOUNDS; MECHANICAL PROCESSES; TEMPERATURE;

EID: 84905457168 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201400654 Document Type: Article

Times cited : (93)

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