Manipulating topological phase transition by strain

Acta Crystallographica Section C: Structural Chemistry

Volumn 70, Issue 2, 2014, Pages 118-122

  Liu, Junwei ^a   Xu, Yong ^a   Wu, Jian ^a   Gu, Bing Lin ^a   Zhang, S B ^b   Duan, Wenhui ^a  

^a TSINGHUA UNIVERSITY   (China)

^b Rensselaer Polytechnic Institute   (United States)

Author keywords

computational materials discovery; conduction band minimum; strain induced topological phase transition; valence band maximum

Indexed keywords

CALCULATIONS; CONDUCTION BANDS; ELECTRIC INSULATORS; ELECTRONIC PROPERTIES;

COMPUTATIONAL MATERIALS; CONDUCTION-BAND MINIMUM; DEVICE APPLICATION; FIRST-PRINCIPLES CALCULATION; NARROW-GAP SEMICONDUCTORS; TOPOLOGICAL INSULATORS; TOPOLOGICAL PHASE; VALENCE-BAND MAXIMUMS;

TOPOLOGY;

EID: 84905440083     PISSN: None     EISSN: 20532296     Source Type: Journal    
DOI: 10.1107/S2053229613032336     Document Type: Article

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