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Volumn 2, Issue , 2003, Pages 811-814

Simulation of vertical Hall sensor in high-voltage CMOS technology

Author keywords

[No Author keywords available]

Indexed keywords

CABLES; CMOS INTEGRATED CIRCUITS; HALL EFFECT TRANSDUCERS; MAGNETIC SENSORS;

EID: 84905187641     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/TELSKS.2003.1246346     Document Type: Conference Paper
Times cited : (4)

References (7)
  • 1
    • 0021483872 scopus 로고
    • The vertical Hall-effect device
    • R.S. Popovic, "The vertical Hall-effect device," IEEE Electron Dev. Lett., EDL-5 (9), pp. 357-358, 1984.
    • (1984) IEEE Electron Dev. Lett. , vol.EDL-5 , Issue.9 , pp. 357-358
    • Popovic, R.S.1
  • 2
    • 0003920493 scopus 로고
    • Adam Higler: Bristol, Philadelphia and New York
    • R.S. Popovic, Hall Effect Devices, Adam Higler: Bristol, Philadelphia and New York, 1991.
    • (1991) Hall Effect Devices
    • Popovic, R.S.1
  • 4
    • 84905185505 scopus 로고    scopus 로고
    • Simulacija karakteristika vertikalnog Holovog senzora u visokonaponskoj CMOS tehnologiji
    • Herceg Novi
    • E. Jovanovic, D Pantic, D.Pantic, "Simulacija karakteristika vertikalnog Holovog senzora u visokonaponskoj CMOS tehnologiji". Zbomik radova XLVII Konf. za ETRAN, Herceg Novi, 2003
    • (2003) Zbomik Radova XLVII Konf. Za ETRAN
    • Jovanovic, E.1    Pantic, D.2    Pantic, D.3
  • 5
    • 84905195983 scopus 로고    scopus 로고
    • 0.8um HV CMOS Process Parameters, Document #9933013
    • 0.8um HV CMOS Process Parameters, Austria Mikro Systeme International AG, Document #9933013, 1999.
    • (1999) Austria Mikro Systeme International AG


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.