High-efficient ZnO/PVD-CdS/Cu(In,Ga)Se2 thin film solar cells: Formation of the buffer-absorber interface and transport properties

Materials Research Society Symposium Proceedings

Volumn 865, Issue , 2005, Pages 449-455

  Rusu, Marin ^a   Glatzel, Thilo ^a,b   Kaufmann, Christian A ^a   Neisser, Axel ^a   Siebentritt, Susanne ^a   Sadewasser, Sascha ^a   Schedel Niedrig, Thomas ^a   Lux Steiner, Martha Ch ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b UNIVERSITY OF YAMANASHI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GRAIN BOUNDARIES; PASSIVATION; PHYSICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; SOLAR CELLS; THIN FILMS; BUFFER LAYERS; CADMIUM SULFIDE; DEPOSITION; ELECTRONIC PROPERTIES; FILM PREPARATION; GALLIUM; OPEN CIRCUIT VOLTAGE; OPTICAL WAVEGUIDES; TRANSPORT PROPERTIES;

BAND GAPS; CHEMICAL BATH DEPOSITION (CBD); OPEN-CIRCUIT VOLTAGE; BENEFICIAL EFFECTS; CHEMICAL-BATH DEPOSITION; ELECTRONIC TRANSPORT PROPERTIES; FABRICATION PROCESS; GROWTH STAGES; KELVIN PROBE FORCE MICROSCOPY; QUANTUM EFFICIENCY MEASUREMENTS; THIN FILM SOLAR CELLS;

ZINC OXIDE; SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84904985012     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-865-f14.25     Document Type: Conference Paper

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