Effects of Zr dopant and sintering temperature on electrical properties of In2O3-SrO based ceramics

Ceramics International

Volumn 40, Issue 8 PART A, 2014, Pages 11533-11541

  Bondarchuk, A N ^a   Aguilar Martinez, J A ^b,c   Pech Canul, M I ^d  

^a UNIVERSIDAD TECNOLÓGICA DE LA MIXTECA   (Mexico)

^b CENTRO DE INVESTIGACIÓN EN MATERIALES AVANZADOS   (Mexico)

^c UNIVERSIDAD AUTÓNOMA DE NUEVO LEÓN   (Mexico)

^d DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

Adsorption processes; B. Grain boundaries; Current limiting; Grain boundary potential barriers; Indium oxide

Indexed keywords

CERAMIC MATERIALS; DOPING (ADDITIVES); GRAIN BOUNDARIES; INDIUM; MIXTURES; SCANNING ELECTRON MICROSCOPY; SINTERING; X RAY DIFFRACTION; ZIRCONIUM; ZIRCONIUM ALLOYS;

AC MEASUREMENTS; ADSORPTION PROCESS; CURRENT LIMITING; HIGH CONDUCTIVITY; INDIUM OXIDE; POTENTIAL BARRIERS; SINTERING TEMPERATURES; TEMPERATURE DEPENDENCE;

ELECTRIC PROPERTIES;

EID: 84903889066     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2014.03.096     Document Type: Article

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