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Physical Review B - Condensed Matter and Materials Physics

Volumn 89, Issue 23, 2014, Pages

Electronic structure of the negatively charged silicon-vacancy center in diamond

(11) Rogers, Lachlan J a Jahnke, Kay D a Doherty, Marcus W b Dietrich, Andreas a McGuinness, Liam P a Müller, Christoph a Teraji, Tokuyuki c Sumiya, Hitoshi d Isoya, Junichi e Manson, Neil B b Jelezko, Fedor a

a UNIVERSITY OF ULM (Germany)

b AUSTRALIAN NATIONAL UNIVERSITY (Australia)

c NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

d SUMITOMO ELECTRIC INDUSTRIES LTD (Japan)

e UNIVERSITY OF TSUKUBA (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84902210801 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.89.235101 Document Type: Article

Times cited : (230)

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