Remarkable effects of disorder on superconductivity of single atomic layers of lead on silicon

Nature Physics

Volumn 10, Issue 6, 2014, Pages 444-450

  Brun, C ^a   Cren, T ^a   Cherkez, V ^a   Debontridder, F ^a   Pons, S ^a   Fokin, D ^a,b   Tringides, M C ^c   Bozhko, S ^d   Ioffe, L B ^a,e,f   Altshuler, B L ^g   Roditchev, D ^a,h  

^a INSTITUT DES NANOSCIENCES DE PARIS   (France)

^b JOINT INSTITUTE FOR HIGH TEMPERATURES   (Russian Federation)

^c IOWA STATE UNIVERSITY   (United States)

^d INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^e LPTHE   (France)

^f RUTGERS UNIVERSITY   (United States)

^g Department of Earth and Environmental Sciences   (United States)

^h Centre National de la Recherche Scientifique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; SCANNING TUNNELING MICROSCOPY; SILICON; SUPERCONDUCTING DEVICES;

COHERENCE LENGTHS; MICROSCOPIC PROCESS; QUANTUM DEVICE; SPECTRAL RESPONSE; STRUCTURAL DEFECT; STRUCTURAL DISORDERS; SUPERCONDUCTING ORDERING; SURFACE AND INTERFACES;

CRYSTAL ATOMIC STRUCTURE;

EID: 84901981997     PISSN: 17452473     EISSN: 17452481     Source Type: Journal    
DOI: 10.1038/nphys2937     Document Type: Article

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