Investigation on the structural stability and electronic properties of InSb nanostructures - A DFT approach

Alexandria Engineering Journal

Volumn 53, Issue 2, 2014, Pages 437-444

  Nagarajan, V ^a   Chandiramouli, R ^a  

^a SASTRA UNIVERSITY   (India)

Author keywords

Binding energy; Electronic property; Embedding energy; Indium antimonide; Nanostructures

Indexed keywords

BINDING ENERGY; ELECTRON AFFINITY; ELECTRONIC PROPERTIES; EMBEDDINGS; III-V SEMICONDUCTORS; INDIUM ANTIMONIDES; IONIZATION POTENTIAL; MICROELECTRONICS; NANOSTRUCTURES; OPTOELECTRONIC DEVICES; STABILITY;

B3LYP/LANL2DZ; EMBEDDING ENERGY; HOMO-LUMO GAPS; IMPURITY ATOMS; INDIUM ANTIMONIDE; POINT SYMMETRY; STRUCTURAL STABILITIES; VIBRATIONAL STUDY;

ANTIMONY COMPOUNDS;

EID: 84901297033     PISSN: 11100168     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.aej.2014.03.008     Document Type: Article

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