Microstructure modulation in copper interconnects

IEEE Electron Device Letters

Volumn 35, Issue 5, 2014, Pages 572-574

  Yang, C C ^a   Li, B ^b   Baumann, F H ^b   Li, J ^b   Edelstein, D ^a   Rosenberg, R ^a  

^a IBM RESEARCH   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

Copper; electromigration.; grain size; stress

Indexed keywords

ELECTROMIGRATION; GRAIN GROWTH; GRAIN SIZE AND SHAPE; MICROSTRUCTURE; MODULATION; STRESSES;

ANNEAL TEMPERATURES; CONVENTIONAL STRUCTURES; COPPER INTERCONNECTS; ELECTROMIGRATION RESISTANCE; ELEVATED ANNEALING; ELEVATED TEMPERATURE; GRAIN SIZE; RELIABILITY DEGRADATION;

COPPER;

EID: 84899953082     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2014.2309476     Document Type: Article

References (10)

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