Multiple topological interface states in silicene

New Journal of Physics

Volumn 16, Issue , 2014, Pages

  Wang, S K ^a   Wang, J ^a   Chan, K S ^b  

^a SOUTHEAST UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Electric field; Interface state; Silicene; Topological insulator

Indexed keywords

ARTIFICIAL INTELLIGENCE; ELECTRIC FIELDS; ELECTRIC INSULATORS; ELECTRON TUNNELING; ELECTRONS; LANDFORMS; SILICENE; TOPOLOGY;

CHERN NUMBERS; DIRAC ELECTRONS; EFFECTIVE MASS; ELECTRON MASS; EXCITATION GAPS; LATTICE STRUCTURES; SPATIAL VARIATIONS; TOPOLOGICAL INSULATORS;

INTERFACE STATES;

EID: 84899552785     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/16/4/045015     Document Type: Article

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