Study of low temperature MOCVD deposition of TiN barrier layer for copper diffusion in high aspect ratio through silicon vias

Microelectronic Engineering

Volumn 120, Issue , 2014, Pages 127-132

  Djomeni, Larissa ^a,d   Mourier, Thierry ^a   Minoret, Stéphane ^a   Fadloun, Sabrina ^c   Piallat, Fabien ^a   Burgess, Steve ^b   Price, Andrew ^b   Zhou, Yun ^b   Jones, Christopher ^b   Mathiot, Daniel ^d   Maitrejean, Sylvain ^a  

^a CEA GRENOBLE   (France)

^b SPTS   (United Kingdom)

^c SPTS SAS Inovallée Bat B 445   (France)

^d UNIVERSITÉ DE STRASBOURG   (France)

Author keywords

Barrier; Copper diffusion; MOCVD; Step coverage; Through Silicon via (TSV); TiN

Indexed keywords

ASPECT RATIO; CHEMICAL VAPOR DEPOSITION; COPPER; DEPOSITION; DESIGN OF EXPERIMENTS; FLOW RATE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLASMA APPLICATIONS; SILICON; SILICON WAFERS; TEMPERATURE; TIN; TITANIUM NITRIDE;

BARRIER; COPPER DIFFUSION; COPPER DIFFUSION BARRIER; MATERIAL SPECIFICATION; METAL ORGANIC PRECURSORS; PHYSICOCHEMICAL PROPERTY; STEP-COVERAGE; THROUGH-SILICON-VIA (TSV);

DIFFUSION BARRIERS;

EID: 84898828776     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2013.11.010     Document Type: Article

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