Preparation and characterization of ZnS nanocrystalline thin films by low cost dip technique

Journal of Materials Science: Materials in Electronics

Volumn 25, Issue 5, 2014, Pages 2017-2023

  Farid, Huda ^a   Abdel Rafea, M ^a,b   El Wahidy, E F ^c   El Shazly, O ^c  

^a City for Scientific Research and Technology Applications ^*  (Egypt)

^b AL IMAM MOHAMMAD IBN SAUD ISLAMIC UNIVERSITY IMSIU   (Saudi Arabia)

^c Alexandria University Faculty Of Science   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COPPER; COSTS; CRYSTALLITE SIZE; ENERGY GAP; FILM PREPARATION; II-VI SEMICONDUCTORS; INDIUM; NANOCRYSTALS; NANOSTRUCTURED MATERIALS; OPTICAL DATA PROCESSING; SEMICONDUCTING ZINC COMPOUNDS; THIN FILMS; WIDE BAND GAP SEMICONDUCTORS; X RAY POWDER DIFFRACTION; ZINC SULFIDE;

CROSS-SECTION MORPHOLOGY; CRYSTALLOGRAPHIC PHASIS; ELECTRICAL CHARACTERIZATION; ENERGY DISPERSIVE X-RAY; NANOCRYSTALLINE THIN FILMS; OPTICAL CHARACTERISTICS; THERMOELECTRIC VOLTAGE; THREE ORDERS OF MAGNITUDE;

SULFUR COMPOUNDS;

EID: 84898809182     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-014-1790-9     Document Type: Article

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