A 10.3125-Gbit/s SiGe BiCMOS burst-mode 3R receiver for 10G-EPON systems

Optics InfoBase Conference Papers

Volumn , Issue , 2007, Pages

  Nishihara, Susumu ^a   Kimura, Shunji ^a   Yoshida, Tomoaki ^a   Nakamura, Makoto ^b   Terada, Jun ^b   Nishimura, Kazuyoshi ^b   Kishine, Keiji ^b   Kato, Kazutoshi ^b   Ohtomo, Yusuke ^b   Imai, Takamasa ^a  

^a NTT Access Network Service Systems Laboratories   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

10G-EPON SYSTEMS; BURST MODE RECEIVERS; BURST-MODE; DYNAMIC RANGE; RESPONSIVITY; SIGE BICMOS;

SEMICONDUCTING SILICON;

EID: 84898783386     PISSN: None     EISSN: 21622701     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Tanaka et. al., "Experimental Study on 10 Gbit/s E-PON system using XENPAK-based burst-mode transceivers" ECOC 2005, Volume 2, 139-140 (2005).
2. Suzuki et. al., "A 10G-PON Physical Medium Layer link with new 10.3-Gbit/s LAN-PHY based Optical Interfaces for Future PON Networks", ECOC 2006, Mo.4.5.4 (2006).
3. Nogawa et. al., "A 10Gb/s Burst-Mode CDR IC in 0.13μm CMOS", ISSCC Dig. Tech. Papers, pp. 228-229 (2005).
4. Kimura et. al., "A 10-Gbit/s Burst-Mode 3R Receiver Unit with a New Equalizing Amplifier for High-Speed Optical Packet Communications", ECOC2003, vol.4, Th.3.3.3, pp.1042-1043, Sep.2003 (2003).