Atom-level understanding of the sodiation process in silicon anode material

Journal of Physical Chemistry Letters

Volumn 5, Issue 7, 2014, Pages 1283-1288

  Jung, Sung Chul ^a   Jung, Dae Soo ^b   Choi, Jang Wook ^b   Han, Young Kyu ^a  

^a Dongguk University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

ab initio calculation; amorphous silicon; molecular dynamics; Na ion battery; sodiation

Indexed keywords

AB INITIO CALCULATIONS; AB INITIO MOLECULAR DYNAMICS SIMULATION; LI-ION BATTERIES; NA-ION BATTERIES; ROOM TEMPERATURE; SODIATION; SPECIFIC CAPACITIES; VOLUME EXPANSION;

ANODES; ATOMS; CALCULATIONS; MOLECULAR DYNAMICS; SILICON;

AMORPHOUS SILICON;

EID: 84898080702     PISSN: None     EISSN: 19487185     Source Type: Journal    
DOI: 10.1021/jz5002743     Document Type: Article

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