Electrical characteristics of lead iodide crystal devices on flexible substrate under mechanical tensile strain

Physica Status Solidi (A) Applications and Materials Science

Volumn 211, Issue 4, 2014, Pages 823-827

  Sun, Hui ^a   Zhu, Xinghua ^a   Yang, Dingyu ^a   Yang, Jun ^a   Gao, Xiuying ^a   Li, Xu ^a  

^a CHENGDU UNIVERSITY OF INFORMATION TECHNOLOGY   (China)

Author keywords

dark current; flexible electronics; tensile strain

Indexed keywords

DARK CURRENTS; FLEXIBLE ELECTRONICS; OHMIC CONTACTS;

BAND-TAIL STATE; CONTACT CHARACTERISTICS; ELECTRICAL CHARACTERISTIC; FLEXIBLE DEVICE; FLEXIBLE SUBSTRATE; LEAD IODIDE CRYSTALS; STEADY STATE;

TENSILE STRAIN;

EID: 84897999895     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201330319     Document Type: Article

References (32)

1. S. Roth, and, W. R. Willig, Appl. Phys. Lett. 18, 328 (1971).
2. K. S. Shah, F. Olschner, L. P. Moy, P. Bennett, M. Misra, J. Zhang, M. R. Squillante, and, J. C. Lund, Nucl. Instrum. Methods Phys. Res. A 380, 266 (1996).
3. T. Hayashi, M. Kinpara, J. F. Wang, K. Mimura, and, M. Isshiki, Cryst. Res. Technol. 43, 9 (2008).
4. T. Unagami, J. Electrochem. Soc. 146, 3110 (1999).
5. G. Zentai, M. Schieber, L. Partain, R. Pavlyuchkova, and, C. Proano, J. Cryst. Growth 275, e1327 (2005).
6. T. Shoji, K. Ohba, T. Suehiro, and, Y. Hiratate, IEEE Trans. Nucl. Sci. 42, 659 (1995).
7. T. Shoji, K. Hitomi, T. Tiba, T. Suehiro, and, Y. Hiratate, IEEE Trans. Nucl. Sci. 45, 581 (1998).
8. X. H. Zhu, Z. R. Wei, Y. R. Jin, and, A. P. Xiang, Cryst. Res. Technol. 42, 456 (2007).
9. J. Tonn, A. N. Danilewsky, A. Cröll, M. Matuchova, and, J. Maixner, J. Cryst. Growth 318, 558 (2011).
10. J. Eckstein, B. Erler, C. Eiche, and, K. W. Benz, J. Cryst. Growth 131, 453 (1993).
11. J. Eckstein, B. Erler, and, K. W. Benz, Mater. Res. Bull. 27, 537 (1992).
12. E. Saucedo, L. Fornaro, L. Mussio, and, A. Gancharov, IEEE Trans. Nucl. Sci. 49, 1974 (2002).
13. P. A. Beckmann, Cryst. Res. Technol. 45, 455 (2010).
14. M. R. Tubbs, Phys. Status Solidi B 49, 11 (1972).
15. M. Schluter, and, M. L. Cohen, Phys. Rev. B 14, 424 (1976).
16. K. S. Shah, and, M. R. Squillante, final report, submitted to the Defense Nuclear Agency, No. DNA001-94-C-0140 (1995).
17. H. Sun, X. H. Zhu, D. Y. Yang, Z. Y. He, S. F. Zhu, and, B. J. Zhao, J. Semicond. 33, 053002 (2012).
18. T. Hayashi, M. Kinpara, J. F. Wang, K. Mimura, and, M. Isshiki, J. Cryst. Growth 310, 47 (2008).
19. X. H. Zhu, H. Sun, D. Y. Yang, and, X. L. Zheng, Nucl. Instrum. Methods Phys. Res. A 691, 10 (2012).
20. Y. H. Lee, and, Y. J. Kim, Appl. Phys. Lett. 101, 083102 (2012).
21. X. D. Wang, J. Zhou, J. H. Song, J. Liu, N. S. Xu, and, Z. L. Wang, Nano Lett. 6, 2768 (2006).
22. T. N. Ng, W. S. Wong, R. A. Lujan, and, R. A. Street, Adv. Mater. 21, 1855 (2009).
23. A. L. Briseno, R. J Tseng, M.-M. Ling, E. H. L. Falcao, Y. Yang, F. Wudl, and, Z. Bao, Adv. Mater. 18, 2320 (2006).
24. J. F. Nye, Physical Properties of Crystals (Academic Press, New York, 1981), p. 120.
25. P. W. Bridgman, Phys. Rev. 42, 858 (1932).
26. C. S. Smith, Phys. Rev. 94, 42 (1954).
27. F. Yakuphanoglu, M. Sekerci, and, E. Evin, Phys. B 382, 21 (2006).
28. G. D. Cody, T. Tiedje, B. Abeles, B. Brooks, and, Y. Goldstein, Phys. Rev. Lett. 47, 1480 (1981).
29. D. D. Malinovska, H. Nichev, and, O. Angelov, Phys. Status Solidi C 5, 3353 (2008).
30. J. J. Dong, and, D. A. Drabold, Phys. Rev. B 54, 10284 (1996).
31. P. A. Fedders, Phys. Rev. B 58, 15624 (1998).
32. S. Sherman, S. Wagner, and, R. A. Gottscho, Appl. Phys. Lett. 69, 3242 (1996).