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ChemSusChem

Volumn 7, Issue 4, 2014, Pages 1102-1106

Capacitance of p- and n-doped graphenes is dominated by structural defects regardless of the dopant type

(5) Ambrosi, Adriano a Poh, Hwee Ling a Wang, Lu a Sofer, Zdenek b Pumera, Martin a

a Nanyang Technological University (Singapore)

b INSTITUTE OF CHEMICAL TECHNOLOGY (Czech Republic)

Author keywords

boron; doping; electrochemistry; electron microscopy; nitrogen

Indexed keywords

ACTIVATION ANALYSIS; BORON; CAPACITANCE; CHARACTERIZATION; ELECTROCHEMISTRY; ELECTRON MICROSCOPY; GAMMA RAYS; GRAPHENE; MATERIALS PROPERTIES; NITROGEN; ORGANIC POLYMERS; PHOTOELECTRONS; RAMAN SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

BORON AND NITROGEN DOPING; BRUNAUER EMMETT TELLER ANALYSIS; CAPACITIVE BEHAVIOR; ELECTROCHEMICAL TECHNIQUES; GRAPHITIC STRUCTURES; INTRINSIC CAPACITANCE; NITROGEN-DOPED GRAPHENE; STRUCTURAL DIFFERENCES;

DOPING (ADDITIVES);

BORON; GRAPHITE; NITROGEN;

ARTICLE; CHEMISTRY; DOPING; ELECTRIC CAPACITANCE; ELECTROCHEMISTRY; ELECTRON MICROSCOPY;

BORON; DOPING; ELECTROCHEMISTRY; ELECTRON MICROSCOPY; NITROGEN;

ELECTRIC CAPACITANCE; ELECTROCHEMISTRY; GRAPHITE;

EID: 84897981039 PISSN: 18645631 EISSN: 1864564X Source Type: Journal
DOI: 10.1002/cssc.201400013 Document Type: Article

Times cited : (44)

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