SCOPUS 정보 검색 플랫폼

Volumn 24, Issue 9, 2014, Pages 1218-1227

Highly electron transparent Graphene for field emission triode gates

(12) Li, Chi a Cole, Matthew T b Lei, Wei a Qu, Ke a Ying, Kai b Zhang, Yan b Robertson, Alex R c Warner, Jamie H c,e Ding, Shuyi a Zhang, Xiaobing a Wang, Baoping a Milne, William I b,d

a SOUTHEAST UNIVERSITY (China)

b UNIVERSITY OF CAMBRIDGE (United Kingdom)

c UNIVERSITY OF OXFORD (United Kingdom)

d Nanjing Camray Technology Ltd (China)

e Kyung Hee University (South Korea)

Author keywords

chemical vapor deposition; electron transmission; field emission; graphene; triode gate

Indexed keywords

AMPLIFICATION FACTORS; ANGULAR DISPERSIONS; CHEMICAL VAPOR DEPOSITED; ELECTRON TRANSMISSION; ELECTRON TRANSPARENCY; FIELD EMISSION TRIODES; INTEGRATED INTENSITIES; TRANSPARENT GRAPHENE;

AMPLIFICATION; CHEMICAL VAPOR DEPOSITION; ELECTRON SOURCES; ELECTRONS; FIELD EMISSION; REFRACTORY MATERIALS; REFRACTORY METAL COMPOUNDS; REFRACTORY METALS; TRANSPARENCY; TRIODES; VAPORS;

GRAPHENE;

EID: 84897625701 PISSN: 1616301X EISSN: 16163028 Source Type: Journal
DOI: 10.1002/adfm.201300322 Document Type: Article

Times cited : (54)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.