One-step formation of a single atomic-layer transistor by the selective fluorination of a graphene film

Small

Volumn 10, Issue 5, 2014, Pages 989-997

  Ho, Kuan I ^a   Liao, Jia Hong ^a   Huang, Chi Hsien ^d   Hsu, Chang Lung ^c   Zhang, Wenjing ^c   Lu, Ang Yu ^c   Li, Lain Jong ^c,e   Lai, Chao Sung ^a   Su, Ching Yuan ^a,b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^d MING CHI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^e CHINA MEDICAL UNIVERSITY HOSPITAL   (Taiwan)

Author keywords

CF4 plasma; fluorinated graphene; graphene; transistors

Indexed keywords

ELECTRICAL CONDUCTIVITY; GRAPHENE TRANSISTORS; HETEROJUNCTION STRUCTURES; OPTICAL AND ELECTRICAL CHARACTERIZATION; OPTICAL AND ELECTRICAL PROPERTIES; SELECTIVE FLUORINATION; SELECTIVE PATTERNING; STOICHIOMETRIC RATIO;

ATOMS; ELECTRIC PROPERTIES; FLUORINATION; FLUORINE; GOLD; HALOGENATION; HETEROJUNCTIONS; PHOTOELECTRONS; PLASMA APPLICATIONS; TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY;

GRAPHENE;

EID: 84897585020     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.201301366     Document Type: Article

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