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Volumn 1, Issue , 1999, Pages 151-154

Physics of future ultra high speed transistors - Part 1: HBT

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT STATUS; ULTRA HIGH SPEED;

EID: 84897562485     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.1999.338295     Document Type: Conference Paper
Times cited : (3)

References (24)
  • 2
    • 84897547493 scopus 로고    scopus 로고
    • W. Shockley, US Patent 2569347 (1948)
    • W. Shockley, US Patent 2569347 (1948)
  • 4
    • 77956974116 scopus 로고
    • Hetero-bipolar transistor and its LSI application
    • Academic Press, Boston
    • T. Sugeta and T. Tshibashi, Hetero-Bipolar Transistor and Its LSI Application, in Semiconductors and Semimetals, Vol. 30, Academic Press, Boston, 1990
    • (1990) Semiconductors and Semimetals , vol.30
    • Sugeta, T.1    Tshibashi, T.2
  • 8
    • 84897564083 scopus 로고    scopus 로고
    • Properties of strained and relaxed sige
    • INSPEC, London
    • H. J. Herzog in, Properties of Strained and Relaxed SiGe ", EMIS Datareview, INSPEC, London
    • EMIS Datareview
    • Herzog, H.J.1
  • 11
    • 0027877999 scopus 로고
    • Optimization of sige HBT technology for high speed analog and mixed-signal applications
    • D. L. Harame et al., Optimization of SiGe HBT technology for high speed analog and mixed-signal applications, Tech. Dig. Int. Electr. Dev. Meeting, (1993), pp. 71-74
    • (1993) Tech. Dig. Int. Electr. Dev. Meeting , pp. 71-74
    • Harame, D.L.1
  • 12
    • 84886448070 scopus 로고    scopus 로고
    • 130 GHz fr sige HBT technology
    • K. Oda, E. Ohue, M. Tabanbe et al., 130 GHz fr SiGe HBT Technology, LEDM Techn. Dig. (1997), pp. 791-794
    • (1997) LEDM Techn. Dig. , pp. 791-794
    • Oda, K.1    Ohue, E.2    Tabanbe, M.3
  • 14
    • 0031071685 scopus 로고    scopus 로고
    • 42GHz static frequency divider in Si/SiGe bipolar technology
    • M. Wurzer et al., 42GHz static frequency divider in Si/SiGe bipolar technology, Tech. Dig. IEEE Int. Solid State Circuits Conf., (1997), pp. 122-123
    • (1997) Tech. Dig. IEEE Int. Solid State Circuits Conf. , pp. 122-123
    • Wurzer, M.1
  • 19
    • 0024750693 scopus 로고
    • Si/SiGe heterojunction bipolar transistor made by molecular beam epitaxy
    • P. Narozny, H. Dämbkes, H. Kibbel, E. Kasper Si/SiGe Heterojunction Bipolar Transistor made by molecular beam epitaxy, IEEE Trans. on Electr. Devices 36(10), 2363-2367 (1989)
    • (1989) IEEE Trans. on Electr. Devices , vol.36 , Issue.10 , pp. 2363-2367
    • Narozny, P.1    Dämbkes, H.2    Kibbel, H.3    Kasper, E.4
  • 21
    • 0342843301 scopus 로고
    • 50 GHz sige heterobipolar transistor: Growth of the complete layer sequence by molecular beam epitaxy
    • E. Kasper, H. Kibbel, A. Gruhle, 50 GHz SiGe heterobipolar transistor: growth of the complete layer sequence by molecular beam epitaxy, Thin Solid Films 222, 137-140 (1992)
    • (1992) Thin Solid Films , vol.222 , pp. 137-140
    • Kasper, E.1    Kibbel, H.2    Gruhle, A.3
  • 24
    • 84897483786 scopus 로고    scopus 로고
    • E-Kasper, J. Eberhardt, B. Meinerzhagen, will be published
    • E-Kasper, J. Eberhardt, B. Meinerzhagen, will be published


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.