A hollow-GCPW (HGCPW) as low-loss and wafer-conductivity-free structure on a single silicon wafer

Conference Proceedings - 33rd European Microwave Conference, EuMC 2003

Volumn 1, Issue , 2003, Pages 41-44

  Nishino, Tamotsu ^a   Yoshida, Yukihisa ^b   Suehiro, Yoshiyuki ^b   Lee, Sang Seok ^b   Miyaguchi, Kenichi ^a   Fukami, Tatsuya ^b   Oh Hashi, Hideyuki ^a   Ishida, Osami ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b Mitsuhishi Electric Co Advanced Technology R and D Center   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON; SILICON NITRIDE;

BOTTOM GROUND; LOW-LOSS; MICROMACHINING PROCESS; NARROW-LINE WIDTH; SIGNAL LINES; SIN MEMBRANES;

SILICON WAFERS;

EID: 84897560598     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMC.2003.1262213     Document Type: Conference Paper

References (6)

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