8-12GHz VCO with SiGe Heterojunction Bipolar Transistor

1994 24th European Microwave Conference, EUMA 1994

Volumn 1, Issue , 1994, Pages 648-657

  Gruhle, A ^a   Kibbel, H ^b   Speck, R ^a  

^a AIRBUS GROUP INNOVATIONS   (Germany)

^b DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; VARACTORS; VARIABLE FREQUENCY OSCILLATORS;

COMMON EMITTER CONFIGURATION; DOPING PROFILES; HIGH-RESISTIVITY SUBSTRATE; LINEAR DEPENDENCE; LUMPED ELEMENT; OUTPUT FREQUENCY; SIGE HETEROJUNCTION BIPOLAR TRANSISTOR; WIDE FREQUENCY RANGE;

SI-GE ALLOYS;

EID: 84897539283     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.1994.337284     Document Type: Conference Paper

References (6)

1. E.F. Crabbe, B.S. Meyerson, J.M.C. Stork et al., "Vertical profile optimization of very high frequency epitaxial Si- and SiGe-base bipolar transistors", IEDM 93, 83-86
2. A. Schtippen, A. Gruhle, H. Kibbel et al., "90GHz max SiGe HBTs", Device Research Conference 1994
3. H. Schumacher, U. Erben, A. Gruhle. "Noise characterisation of SiGe HBTs at microwave frequencies", Electr. Lett. 28(12), 1167-1168, (1992)
4. R. Plana, H. Kibbel, A. Gruhle et al., "Low-frequency noise and microwave noise parameters in Si/SiGe HBTs", Proc. ESSDERC 93, 51-54, (1993)
5. U. Guttich, A. Gruhle, J.-F. Luy, "A SiGe HBT dielectric resonator stabilized microstrip oscillator at X-band frequencies", Micr. Guid. Wave Lett. 2, 281-283, 1992
6. J.-F. Luy et al., IEE Proc. 139(3), (1992)