A 82-GHz-optical-gain-cutoff-frequency InP/InGaAs double-hetero-structure phototransistor (DHPT) and its application to a 40-GHz-band OEMMIC photoreceiver

2000 30th European Microwave Conference, EuMC 2000

Volumn , Issue , 2000, Pages

  Kamitsuna, Hideki ^a   Matsuoka, Yutaka ^a,b   Yamahata, Shoji ^a   Shigekawa, Naoteru ^a  

^a NTT CORPORATION   (Japan)

^b ANRITSU CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MONOLITHIC INTEGRATED CIRCUITS;

DOUBLE HETEROSTRUCTURES; GAIN CUTOFF FREQUENCY; INP/INGAAS; ITS APPLICATIONS; MONOLITHICALLY INTEGRATED; OPERATION FREQUENCY; PHOTORECEIVERS; ULTRA HIGH SPEED;

PHOTOTRANSISTORS;

EID: 84897534979     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.2000.338661     Document Type: Conference Paper

References (9)

1. J. C. Campbell and K. Ogawa, "Heterojunction phototransistors for long-wavelength optical receivers," J. Appl Phys., vol. 53, pp. 1203-1208, Feb. 1982.
2. S. Chandrasekhar, L. M. Lunardi, A. H. Gnauck, R. A. Hamm and G. J. Qua, "High-speed monolithic p-i-n/HBT and HPT/HBT photoreceivers implemented with simple phototransistor structure," IEEE Photon. Technol. Lett., vol. 5, pp. 1316-1318, Nov. 1993
3. H. Kamitsuna, Y. Matsuoka, S. Yamahata and K. Kurishima, "A monolithically integrated photoreceiver realized by InP/InGaAs double-heterostructure bipolar transistor technologies for optical/microwave interaction systems," in 1995 IEEE GaAs IC Symp. Dig., pp. 185-188, Oct. 1995.
4. C. Gonzalez, J. Thuret, J. L. Benchimol and M. Riet, "InP/InGaAs bipolar phototransistor as a front-end photoreceiver for HFR distribution networks," in Int. Topical Meeting on Microwave Photonics (MAIWP'99) Dig., pp. 35-38, Nov. 1999.
5. H. Kamitsuna, "A 15-GHz direct optical injection-locked MMIC oscillator using photosensitive HBTs," IEICE Trans. Electron., vol. E79-C, No. 1, pp. 40-45, Jan. 1996.
6. Y. Matsuoka and E. Sano, "InP/InGaAs double-heterostructure bipolar transistors for high-speed ICs and OEICs," Solid-State Electronics, vol. 38, pp. 1703-1709, Sep. 1995.
7. Y. Matsuoka, S. Yamahata, K. Kurishima and H. Ito, "Ultrahighspeed InP/InGaAs double-heterostructure bipolar transistors and analyses of their operation," Jpn. J. Appl. Phys., vol. 35, Part 1, No. 1 1, pp. 5646-5654, Nov. 1996.
8. H. Fukano, Y. Takanashi and M. Fujimoto, "High-speed InP-InGaAs heterojunction phototransistors employing a nonalloyed electrode metal as a reflector," IEEE J. Quantum Electron., vol. 30, No. 12, pp. 2889-2895, Dec. 1994.
9. S. Yamahata, K. Kurishima, H. Nakajima and E. Sano, "InP/InGaAs DHBTs technology for single-chip 20-Gbit/s regenerative receiver circuits with extremely low power dissipation," OSA TOPS on Ultrafast Electronics and Optoelectronics, vol. 13, pp. 135-140, 1997.