InP/InGaAs DHBTs Technology for Single-Chip 20-Gbit/s Regenerative Receiver Circuits with Extremely Low Power Dissipation

Optics InfoBase Conference Papers

Volumn , Issue , 1997, Pages 135-140

  Yamahata, Shoji ^a   Kurishima, Kenji ^a   Nakajima, Hiroki ^a   Sano, Eiichi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

DHBT; InP InGaAs; low power dissipation; regenerative receiver

Indexed keywords

ELECTRIC LOSSES; FLIP FLOP CIRCUITS; GALLIUM ALLOYS; III-V SEMICONDUCTORS; LOW POWER ELECTRONICS; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR ALLOYS; TIMING CIRCUITS;

DHBT; DHBT TECHNOLOGY; INP/INGAAS; LOW-POWER DISSIPATION; MONOLITHICS; RECEIVER CIRCUITS; REGENERATIVE RECEIVER; SELF-ALIGNED; SINGLE-CHIP; ULTRA HIGH SPEED;

INDIUM PHOSPHIDE;

EID: 3743135355     PISSN: None     EISSN: 21622701     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)

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