1.55 μm InP-based VCSEL with enhanced modulation bandwidths > 10 GHz up to 85°C

Conference on Optical Fiber Communication, Technical Digest Series

Volumn , Issue , 2009, Pages

  Hofmann, W ^a   Muller, M ^a   Bohm, G ^a   Ortsiefer, M ^b   Amann, M C ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b VERTILAS GMBH   (Germany)

Author keywords

(060.4510) Optical communications; (250.7260) Vertical cavity surface emitting lasers

Indexed keywords

BANDWIDTH; COST EFFECTIVENESS; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; MODULATION; OPTICAL FIBERS; SEMICONDUCTING INDIUM PHOSPHIDE; SURFACE EMITTING LASERS; TRANSCEIVERS;

100G ETHERNET; ACTIVE REGIONS; BIT RATES; COST EFFECTIVE; MODULATION BANDWIDTH; PARASITICS;

OPTICAL FIBER COMMUNICATION;

EID: 84897064140     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1364/ofc.2009.otuk5     Document Type: Conference Paper

References (5)

1. P. Westbergh, et. al. Large aperture 850 nm VCSELs operating at bit rates up to 25 Gbit/s., Electron. Lett., 44, pp. 907-908, (2008)
2. W. Hofmann, N. H. Zhu, M. Ortsiefer, G. Böhm, J. Rosskopf, L. Chao, S. Zhang, M. Maute, and M.-C. Amann,. 10-Gb/s Data Transmission Using BCB Passivated 1. 55-μm InGaAlAs-InP VCSELs., IEEE Photon. Technol. Lett., 18, pp. 424-426, (2006)
3. W. Hofmann, N. H. Zhu, M. Ortsiefer, G. Böhm, Y. Liu and M. C. Amann,. High speed (11 GHz) modulation of BCB-passivated 1. 55 μm InGaAlAs-InP VCSELs., Electron. Lett., 42, pp. 976-978, (2006)
4. N. Nishiyama, et. al.,. 1. 3 and 1. 55-m InP-based VCSELs for digital and radio signal transmission., OFC/NFOEC, OMK4, pp. 1-3, (2007)
5. A. Syrbu, A Mereuta, V. Iakovlev, A. Caliman, P. Royo, E. Kapon,. 10 Gbps VCSELs with High Single Mode Output in 1310nm and 1550 nm Wavelength Bands. OFC/NFOEC, OThS2. pp. 1-3, (2008).