100 Gb/s operation of an AlGaInAs semi-insulating buried heterojunction EML

Conference on Optical Fiber Communication, Technical Digest Series

Volumn , Issue , 2009, Pages

  Kazmierski, C ^a   Konczykowska, A ^a   Jorge, F ^a   Blache, F ^a   Riet, M ^a   Jany, C ^a   Scavennec, A ^a  

^a ALCATEL THALES III V LAB   (France)

Author keywords

250.5300; 250.7360

Indexed keywords

ALUMINUM ALLOYS; GALLIUM ALLOYS; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; OPTICAL FIBERS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR ALLOYS;

250.5300; 250.7360; ALGAINAS/INP; BURIED HETEROSTRUCTURES; ELECTRO-ABSORPTION MODULATED LASER; INP HETEROJUNCTION BIPOLAR TRANSISTORS; OPEN EYE DIAGRAMS; SEMI-INSULATING;

OPTICAL FIBER COMMUNICATION;

EID: 84897043703     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1364/ofc.2009.otht7     Document Type: Conference Paper

References (5)

1. Robert Lewén et al, Segmented Transmission-Line Electroabsorption Modulators, Journal of Ligthwave Technology, vol. 22, 2004, p. 172
2. C. Kazmierski et al, High Speed AlGaInAs Electroabsorption Modulated Laser and its Optically Equalized Operation at 86 Gb/s, ECOC 2008, Brussels 21-25 September 2008, paper We3C2
3. C. Jany et al, Semi-Insulating Buried Heterostructure 1. 55m InGaAlAs Electro-absorption Modulated Laser with 60GHz Bandwidth, ECOC 2007, Berlin 16-20 September 2007, paper PD2. 7
4. A. Konczykowska et al., High quality 80 Gbit/s InP DHBT selector and its use for NRZ-RZ conversion, Electronics Letters, 8th January 2003, vol. 39, No. 1, pp. 49-51
5. J. Godin et al., Submicron InP DHBT technology for high-speed high-swing mixed-signal ICs, to be published in Proc. of CSICS 2008, October 2008, Monterey, CA