High-speed and temperature-insensitive operation in 1.3-μm InAs/GaAs high-density quantum dot lasers

Conference on Optical Fiber Communication, Technical Digest Series

Volumn , Issue , 2009, Pages

  Tanaka, Yu ^a,b   Ishida, Mitsuru ^d   Maeda, Yasunari ^b   Akiyama, Tomoyuki ^b   Yamamoto, Tsuyoshi ^a,e   Song, Hai Zhi ^a   Yamaguchi, Masaomi ^b   Nakata, Yoshiaki ^a,b   Nishi, Kenichi ^b   Sugawara, Mitsuru ^a,b,e   Arakawa, Yasuhiko ^c,d  

^a FUJITSU LABORATORIES LTD   (Japan)

^b QD Laser Inc   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

^e Optoelectronic Industry and Technology Development Association OITDA   (Japan)

Author keywords

(140.5960) Semiconductor laser; (250.5590) Quantum well, wire and dot devices

Indexed keywords

III-V SEMICONDUCTORS; INDIUM ARSENIDE; NANOCRYSTALS; NARROW BAND GAP SEMICONDUCTORS; OPTICAL FIBER COMMUNICATION; OPTICAL FIBERS; QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

(250.5590) QUANTUM-WELL, -WIRE AND -DOT DEVICES; DIRECT MODULATION; DIRECTLY MODULATED; DRIVING CONDITIONS; HIGH SPEED; HIGH-DENSITY QUANTUM; TEMPERATURE-INSENSITIVE; TEMPERATURE-INSENSITIVE OPERATION;

QUANTUM DOT LASERS;

EID: 84897039572     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1364/ofc.2009.owj1     Document Type: Conference Paper

References (4)

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2. M. Ishida, N. Hatori, K. Otsubo, T. Yamamoto, Y. Nakata, H. Ebe, M. Sugawara and Y. Arakawa, "Low-driving-current temperature-stable 10 Gbit/s operation of p-doped 1. 3 m quantum dot lasers between 20and 90 °C", Electron Lett. 43, 219-220 (2007)
3. Z. Mi, P. Bhattacharya, and S. Fathpour, "High-speed 1. 3 m tunnel injection quantum-dot lasers", Appl. Phys. Lett. 86, 153109-153111 (2005)
4. M. Ishida, K. Watanabe, N. Kumagai, Y. Nakata, N. Hatori, H. Sudo, T. Yamamoto, M. Sugawara, and Y. Arakawa, "Enhanced maximum modal gain of 1. 3-m antimony mediated InAs self-assembled quantum-dot lasers" 19th International Conference on Indium Phosphide and Related Materials (IPRM2007) FrB1-3, Matsue, Japan (2007)