Low-driving-current temperature-stable 10Gbit/s operation of p-doped 1.3m quantum dot lasers between 20 and 90°C

Electronics Letters

Volumn 43, Issue 4, 2007, Pages 219-221

  Ishida, M ^a   Hatori, N ^a   Otsubo, K ^b,d   Yamamoto, T ^b,d   Nakata, Y ^a   Ebe, H ^a   Sugawara, M ^b,d   Arakawa, Y ^c  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d Optoelectronic Industry and Technology Development Association   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLITUDE MODULATION; OPTIMIZATION; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS;

CURRENT TEMPERATURE; MODULATION CURRENTS; QUANTUM DOT LASERS;

SEMICONDUCTOR LASERS;

EID: 33847164037     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20073522     Document Type: Article

References (8)

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2. Takahashi, T., and Arakawa, Y.: ' Theoretical analysis of gain and dynamic properties of quantum well box lasers ', Optoelectron., Devices Technol., 1988, 3, p. 155-162 0912-5434
3. Shchekin, O.B., Ahn, J., and Deppe, D.G.: ' High temperature performance of self-organised quantum dot laser with stacked p-doped active region ', Electron. Lett., 2002, 38, p. 712-713 10.1049/el:20020509 0013-5194
4. Hatori, N., Otsubo, K., Ishida, M., Okumura, S., Akiyama, T., Nakata, Y., Ebe, H., Sugawara, M., and Arakawa, Y.: ' 20°C-70°C temperature independent 10Gb/s operation of a directly modulated laser diode using p-doped quantum dots ', ECOC, 2004, Scotchman, Sweden, Th4.3.4
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7. Gerschutz, F., Fischer, M., Koeth, J., Chacinski, M., Schatz, R., Kjebon, O., Kovsh, A., Krestnikov, I., and Forchel, A.: ' Temperature insensitive 1.3m InGaAs/GaAs quantum dot distributed feedback lasers for 10Gbit/s transmission over 21km ', Electron. Lett., 2006, 42, p. 1457-1458 0013-5194
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