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Integreated interconnetion of crystalline silicon thin film solar cells
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Frankfurt, Germany
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0002178787
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High efficiency (16.45%) thin film silicon solar cells prepared by zone-melting recrystallization
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Bedford, UK
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Takami, A., Arimoto, S., Morikawa, H., Hamamoto, S., Ishihara, T., Kumabe, H. and Murotani, T., "High Efficiency (16.45%) thin film silicon solar cells prepared by zone-melting recrystallization",in Proc. of 12th EU-PVSEC. 1994. Bedford, UK.
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Takami, A.1
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3
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0032070266
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16.0% efficiency of large area (10 cm x 10 cm) thin film polycrystalline silicon solar cells
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Morikawa, H., Nishimoto, Y., Naomoto, H., Kawama, Y., Takami, A., Arimoto, S., Ishihara, T. and Namba, K., "16.0% Efficiency of large area (10 cm x 10 cm) thin film polycrystalline silicon solar cells" Solar Energy Materials and Solar Cells, vol. 53 pp. 23-28, 1998.
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Morikawa, H.1
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Takami, A.5
Arimoto, S.6
Ishihara, T.7
Namba, K.8
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4
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84856843583
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Atmosperic pressure chemical vapour deposition of 3c-sic for silicon thin-film solar cells on various substrates
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Schillinger, K., Janz, S. and Reber, S., "Atmosperic Pressure Chemical Vapour Deposition of 3C-SiC for Silicon Thin-Film Solar Cells on Various Substrates" Journal of Nanosience and Nanotechnology, vol. 11 pp. 8108-8113, 2011.
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5
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30344480513
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High-throughput zone-melting recrystallization for crystalline silicon thin-film solar cells
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Reber, S., Eyer, A. and Haas, F., "High-throughput zone-melting recrystallization for crystalline silicon thin-film solar cells" Journal of Crystal Growth, vol. 287 pp. 391-396, 2006.
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Journal of Crystal Growth
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Reber, S.1
Eyer, A.2
Haas, F.3
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6
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84896444560
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Advances in equipment and process development for high-throughput continuous silicon epitaxy
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Frankfurt, Germany
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Reber, S., Pocza, D., Keller, M., Arnold, M., Schillinger, N. and Krogul, D., "Advances in Equipment and Process Development for High-Throughput Continuous Silicon Epitaxy",in Proc. of 27th EUPVSEC. 2012. Frankfurt, Germany.
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8
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84896453602
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Investigation on crystal quality of thin silicon films prepared by zmr on different intermediate layers and cost effective substrates
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Aix-Le-Bains, France
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Schillinger, K., Rachow, T., Flatten, L., Janz, S. and Reber, S., "Investigation on Crystal Quality of Thin Silicon Films Prepared by ZMR on Different Intermediate Layers and Cost Effective Substrates",in Proc. of CSSC-6. 2012. Aix-Le-Bains, France.
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Schillinger, K.1
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9
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84864826550
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Grain structure of thin-film silicon by zone melting recrystallization on siC base layer
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Kunz, T., Hessemann, M.T., Auer, R., Bochmann, A., Christiansen, S. and Brabec, C.J., "Grain structure of thin-film silicon by zone melting recrystallization on SiC base layer" Journal of Crystal Growth, vol. 357 pp. 20-24, 2012.
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Christiansen, S.5
Brabec, C.J.6
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11
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84896482329
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Intermediate layer and back surface field optimizations for the recrystallized wafer equivalent
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Frankfurt, Germany
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Lindekugel, S., Rachow, T., Janz, S. and Reber, S., "Intermediate Layer and Back surface Field Optimizations for the Recrystallized Wafer Equivalent",in Proc. of 27th EU-PVSEC. 2012. Frankfurt, Germany.
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Lindekugel, S.1
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