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Volumn , Issue , 2013, Pages 1784-1787

Recrystallized silicon thin-film solar cells on zircon ceramics

Author keywords

Crystalline silicon thin film solar cells; Low cost ceramics; Zone melting recrystallization

Indexed keywords

ATMOSPHERIC PRESSURE; CERAMIC MATERIALS; CHEMICAL VAPOR DEPOSITION; GRAIN BOUNDARIES; MELTING; OPEN CIRCUIT VOLTAGE; RECRYSTALLIZATION (METALLURGY); SILICON; SILICON CARBIDE; ZIRCON;

EID: 84896481570     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2013.6744489     Document Type: Conference Paper
Times cited : (4)

References (11)
  • 1
    • 84896477838 scopus 로고    scopus 로고
    • Integreated interconnetion of crystalline silicon thin film solar cells
    • Frankfurt, Germany
    • Pavlovic, R., Janz, S. and Reber, S., "Integreated Interconnetion of Crystalline Silicon Thin Film Solar Cells",in Proc. of 27th EUPVSEC. 2012. Frankfurt, Germany.
    • (2012) Proc. of 27th EUPVSEC.
    • Pavlovic, R.1    Janz, S.2    Reber, S.3
  • 4
    • 84856843583 scopus 로고    scopus 로고
    • Atmosperic pressure chemical vapour deposition of 3c-sic for silicon thin-film solar cells on various substrates
    • Schillinger, K., Janz, S. and Reber, S., "Atmosperic Pressure Chemical Vapour Deposition of 3C-SiC for Silicon Thin-Film Solar Cells on Various Substrates" Journal of Nanosience and Nanotechnology, vol. 11 pp. 8108-8113, 2011.
    • (2011) Journal of Nanosience and Nanotechnology , vol.11 , pp. 8108-8113
    • Schillinger, K.1    Janz, S.2    Reber, S.3
  • 5
    • 30344480513 scopus 로고    scopus 로고
    • High-throughput zone-melting recrystallization for crystalline silicon thin-film solar cells
    • Reber, S., Eyer, A. and Haas, F., "High-throughput zone-melting recrystallization for crystalline silicon thin-film solar cells" Journal of Crystal Growth, vol. 287 pp. 391-396, 2006.
    • (2006) Journal of Crystal Growth , vol.287 , pp. 391-396
    • Reber, S.1    Eyer, A.2    Haas, F.3
  • 6
    • 84896444560 scopus 로고    scopus 로고
    • Advances in equipment and process development for high-throughput continuous silicon epitaxy
    • Frankfurt, Germany
    • Reber, S., Pocza, D., Keller, M., Arnold, M., Schillinger, N. and Krogul, D., "Advances in Equipment and Process Development for High-Throughput Continuous Silicon Epitaxy",in Proc. of 27th EUPVSEC. 2012. Frankfurt, Germany.
    • (2012) Proc. of 27th EUPVSEC.
    • Reber, S.1    Pocza, D.2    Keller, M.3    Arnold, M.4    Schillinger, N.5    Krogul, D.6
  • 8
    • 84896453602 scopus 로고    scopus 로고
    • Investigation on crystal quality of thin silicon films prepared by zmr on different intermediate layers and cost effective substrates
    • Aix-Le-Bains, France
    • Schillinger, K., Rachow, T., Flatten, L., Janz, S. and Reber, S., "Investigation on Crystal Quality of Thin Silicon Films Prepared by ZMR on Different Intermediate Layers and Cost Effective Substrates",in Proc. of CSSC-6. 2012. Aix-Le-Bains, France.
    • (2012) Proc. of CSSC-6.
    • Schillinger, K.1    Rachow, T.2    Flatten, L.3    Janz, S.4    Reber, S.5
  • 11
    • 84896482329 scopus 로고    scopus 로고
    • Intermediate layer and back surface field optimizations for the recrystallized wafer equivalent
    • Frankfurt, Germany
    • Lindekugel, S., Rachow, T., Janz, S. and Reber, S., "Intermediate Layer and Back surface Field Optimizations for the Recrystallized Wafer Equivalent",in Proc. of 27th EU-PVSEC. 2012. Frankfurt, Germany.
    • (2012) Proc. of 27th EU-PVSEC.
    • Lindekugel, S.1    Rachow, T.2    Janz, S.3    Reber, S.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.