Epitaxial thin film GaAs deposited by MOCVD on low-cost, flexible substrates for high efficiency photovoltaics

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2013, Pages 3393-3396

  Dutta, P ^a   Rathi, M ^b   Ahrenkiel, P ^b   Gao, Y ^a   Mehrotra, A ^a   Galstyan, E ^a   Iliev, M ^a   Makarenko, B ^a   Forrest, R ^a   Freundlich, A ^a   Selvamanickam, V ^a  

^a UNIVERSITY OF HOUSTON   (United States)

^b SOUTH DAKOTA SCHOOL OF MINES AND TECHNOLOGY   (United States)

Author keywords

Epitaxial growth; Flexible substrate; Gallium arsenide; MOCVD; Solar cells

Indexed keywords

EPITAXIAL GROWTH; GALLIUM ARSENIDE; GERMANIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; SOLAR CELLS; THIN FILMS;

DOPING DENSITIES; EPITAXIAL GAAS; EPITAXIAL THIN FILMS; FLEXIBLE SUBSTRATE; GAAS THIN FILMS; MISMATCH STRAIN; THERMOELASTICS; ZINC-BLENDE STRUCTURES;

SUBSTRATES;

EID: 84896464430     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2013.6745177     Document Type: Conference Paper

References (5)

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