Chemical-potential-dependent gap opening at the dirac surface states of Bi 2 Se 3 induced by aggregated substitutional Cr atoms

Physical Review Letters

Volumn 112, Issue 5, 2014, Pages

  Chang, Cui Zu ^a,b,c   Tang, Peizhe ^a,b   Wang, Yi Lin ^c   Feng, Xiao ^a,b,c   Li, Kang ^b,c   Zhang, Zuocheng ^a,b   Wang, Yayu ^a,b   Wang, Li Li ^a,b,c   Chen, Xi ^a,b   Liu, Chaoxing ^d   Duan, Wenhui ^a,b   He, Ke ^a,b,c   Ma, Xu Cun ^a,b,c   Xue, Qi Kun ^a,b  

^a TSINGHUA UNIVERSITY   (China)

^b Collaborative Innovation Center of Quantum Matter ^*  (China)

^c INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^d PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84894422034     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.112.056801     Document Type: Article

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