20-nm magnetic domain wall motion memory with ultralow-power operation

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2013, Pages

  Fukami, S ^a   Yamanouchi, M ^a   Kim, K J ^b   Suzuki, T ^c   Sakimura, N ^d   Chiba, D ^b,e,f   Ikeda, S ^a   Sugibayashi, T ^d   Kasai, N ^a   Ono, T ^b   Ohno, H ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b KYOTO UNIVERSITY   (Japan)

^c RENESAS TECHNOLOGY CORP   (Japan)

^d NEC CORPORATION   (Japan)

^e UNIVERSITY OF TOKYO   (Japan)

^f JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84894296975     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2013.6724553     Document Type: Conference Paper

References (12)

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6. S. Fukami et al., 2012 VLSI Tech., Dig. Tech. Pap., p. 61.
7. T. Koyama et al., Nature Mater. 10, 194 (2011).
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11. W. F. Brown Jr., Phys. Rev. 130, 1677 (1963).
12. E. Kitagawa et al., 2011 IEDM, Tech. Dig., p. 29.4.1.