Synthesis and characterization of In2O3nanoparticles

Journal of the Korean Physical Society

Volumn 64, Issue 2, 2014, Pages 254-262

  Ayeshamariam, A ^a   Kashif, M ^b   Muthu Raja, S ^c   Sivaranjani, S ^d   Sanjeeviraja, C ^e   Bououdina, M ^f  

^a KHADIR MOHIDEEN COLLEGE   (India)

^b UNIVERSITY MALAYSIA PERLIS   (Malaysia)

^c VIT UNIVERSITY   (India)

^d SBM College of Engineering and Technology   (India)

^e ALAGAPPA UNIVERSITY   (India)

^f UNIVERSITY OF BAHRAIN   (Bahrain)

Author keywords

In2O3; Optical; Structure

Indexed keywords

EID: 84894093143     PISSN: 03744884     EISSN: 19768524     Source Type: Journal    
DOI: 10.3938/jkps.64.254     Document Type: Article

References (32)

1. A. L. Dawar and J. C. Joshi, J. Mater. Sci. 19, 1 (1984).
2. H. L. Hartnagel, A. L. Dawar, A. K. Jain and C. J. Jagadish, Semi-conducting Transp Thin Films (IOP, Bristol, 1995).
3. B. G. Lewis and D. C. Paine, MRS Bull. 25, 22 (2000).
4. T. B. Elliott (Ed.), Trends in Semiconductor Research (Nova Science Publishers, New York, 2005).
5. K. Y. Kim and S. B. Park, Mater. Chem. Phys. 86, 210 (2006).
6. S. J. Limmer, K. Takahashi and G. Cao, Proc. SPIE 5224, 25 (2003).
7. D. Yu, D. Wang, W. Yu and Y. Qian, Mater. Lett. 58, 84 (2003).
8. H. Zhu, Y. Wang, N. Wang, Y. Li and J. Yang, Mater. Lett. 58, 2631 (2004).
9. J. E. Song and Y. S. Kang, Proc. Mater. Res. Soc. Symp. 818, 1 (2004).
10. S. Li, X. Qiao, J. Chen, H. Wang, F. Jia and X. Qiu, J. Cryst. Growth 289, 151 (2006).
11. P. S. Devi, M. Chatterjee and D. Ganguli, Mater. Lett. 55, 205 (2002).
12. Y. Li, G. Xu, Y. L. Zhu, X. L. Ma and H. M. Cheng, Solid State Commun. 142, 441 (2007).
13. R. Garkova, G. Volksch and C. Russel, J. Non-Cryst. Solids 352, 5265 (2006).
14. J. M. Kim, J. K. Park, K. N. Kim, C. H. Kim and H. G. Jang, Curr. Appl. Phys. 68, 1198 (2006).
15. A. M. Taurino, M. Epifani, T. Toccoli, S. Iannotta and P. Siciliano, Thin Solid Films 43, 652 (2003).
16. H. Steffes, C. Imawan, F. Solzbacher, F. Solzbacher and E. Obermeier, Sens. Actuat. B 68, 249 (2000).
17. M. Ivanovskaya, A. Gurlo and P. Bogdanov, Sens. Actuat. B 77, 264(2001).
18. E. Comini, A. Cristalli, G. Faglia and Gg. Sberveglieri, Sens. Actuat. B 65, 260 (2000).
19. T. Tadashi, S. Kengo and N, Masanori, Sens. Actuat. B 13/14, 404 (1993).
20. H. Steffes, C. Imawan, F. Solzbacher and E. Obermeier, Sens. Actuat. B 78, 106 (2001).
21. Y. Hiroyuki, T. Jun, M. Koji, N. Miura and Y. Noboru, J. Electrochem. Soc. 144 L158 (1997).
22. A. Gurlo, N. Barsan, M. Ivanovskaya, U. Weimar and W. Gopel, Sens. Actuators, B 47, 92 (1998).
23. H. Yamaura, K. Moriya, N. Miura and N. Yamazoe, Sens. Actuators, B 65, 39 (2000).
24. T. Yuji, N. Masahiko, K. Semi Tomohiro, S. Yasuhiro and E. Makoto, Sens. Actuat. B 24/25, 375 (1995).
25. J. Liang, X. Jiang, G. Liu, Z. Deng, J. Zhuang, F. Li and Y. Li, Mater. Res. Bullet. 38, 161 (2003).
26. A. Bonamartini, F. Bondioli and A. M. Ferrari, Chem. Mater. 13 4550 (2001).
27. R. E. Juarez, D. G. Lamas, G. E. Lascalea and N. E. Walsoe de Reca, J. Euro. Cera. Soci. 20, 133 (2000).
28. K. C. Patil, S. Radhakrishnan, S. Pethkar and K. Vijayamohanan, J. Mat. Res. 16, 1982 (2001).
29. A. E. Hichou, A. Kachouance, J. L. Bubendorff, M. Addou, J. Ebothe, M. Troyon and A. Bougrine, Thin Solid Films 458, 263 (2004).
30. R. D. Purohit, B. P. Sharma, K. T. Pillai and A. K. Tyagi, Mater. Res. Bull. 36, 2711 (2001).
31. Z. Wang, J. Phys. Chem, 113, 4612 (2009).
32. M. T sai, S. Chen and P. Shen, Nanoletters 4, 1197 (2004).