Specific features of plastic relaxation of a metastable GexSi1 - x layer buried between a silicon substrate and a relaxed germanium layer

Physics of the Solid State

Volumn 56, Issue 2, 2014, Pages 247-253

  Bolkhovityanov, Yu B ^a   Gutakovskii, A K ^a   Deryabin, A S ^a   Sokolov, L V ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

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Indexed keywords

EID: 84893933440     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/S106378341402005X     Document Type: Article

References (16)

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