A SiGe BiCMOS W-band LNA with 5.1 dB NF at 90 GHz

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2013, Pages

  Yang, Yang ^a   Cacina, Seyhmus ^a   Rebeiz, Gabriel M ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMMON-EMITTER AMPLIFIER; SIGE BICMOS; SIGE BICMOS TECHNOLOGY; SILICON TECHNOLOGIES;

BICMOS TECHNOLOGY; GALLIUM ARSENIDE; GALLIUM NITRIDE; INTEGRATED CIRCUITS; LOW NOISE AMPLIFIERS; SEMICONDUCTING GALLIUM; SILICON ALLOYS;

SEMICONDUCTING SILICON;

EID: 84892539198     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2013.6659207     Document Type: Conference Paper

References (10)

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