Epitaxial growth and selective etching techniques

Ultra-thin Chip Technology and Applications

Volumn , Issue , 2011, Pages 53-60

  Angelopoulos, Evangelos A ^a   Kaiser, Alexander ^b  

^a Institut fur Mikroelektronik Stuttgart   (Germany)

^b Reinhardt Microtech GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84892107708     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1007/978-1-4419-7276-7_6     Document Type: Chapter

References (13)

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3. Campbell SA, Lewerenz HJ (1998) Semiconductor micromachining: techniques and industrial applications, vol 2. Wiley, West Sussex
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9. Kucytowski J, Wokulska K (2005) Lattice parameter measurements of boron doped Si single crystals. Cryst Res Technol 40:424-428
10. Lin W, Hill DW, Paulnack CL, Kelly MJ (1991) Misfit stress in p/p + epitaxial silicon wafers: effect and elimination. In: Defects in silicon II. The Electrochemical Society, Pennington, pp 163-171
11. Fö ll H. Defects in crystals, Hyperscript, Faculty of Engineering, University of Kiel, http://www.tf.unikiel.de/matwis/amat/def-en/index.html
12. Desmond C (1993) Thin-film silicon-on-insulator by bond and etch back (BESOI). Ph. D. dissertation, Department of Electrical and Computer Engineering, University of California, Davis
13. Maszara WP, Thompson T (1992) Strain compensation by Ge in B-doped silicon epitaxial films. J Appl Phys 9:4477-4479