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Volumn , Issue , 2011, Pages 61-67

Silicon-on-Insulator (SOI) wafer-based thin-chip fabrication

Author keywords

[No Author keywords available]

Indexed keywords


EID: 84892084701     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1007/978-1-4419-7276-7_7     Document Type: Chapter
Times cited : (2)

References (9)
  • 1
    • 0036508380 scopus 로고    scopus 로고
    • SOI technology for the GHz era
    • Shahidi GG (2006) SOI technology for the GHz era. IBM J Res Dev 46:121-131
    • (2006) IBM J Res Dev , vol.46 , pp. 121-131
    • Shahidi, G.G.1
  • 2
    • 0036923554 scopus 로고
    • Extreme scaling with ultra-thin silicon channel MOSFET's (XFET)
    • Dig. Techn. P., San Francisco
    • Doris B et al. (1992) Extreme scaling with ultra-thin silicon channel MOSFET's (XFET). In: International electron device meeting (IEDM), Dig. Techn. P., San Francisco, pp 267-270
    • (1992) International Electron Device Meeting (IEDM) , pp. 267-270
    • Doris, B.1
  • 3
    • 0039524978 scopus 로고
    • Single-crystal silicon on a sapphire substrate
    • Manasevit HM, Simpson WJ (1964) Single-crystal silicon on a sapphire substrate. J Appl Phys 35:1349-1351
    • (1964) J Appl Phys , vol.35 , pp. 1349-1351
    • Manasevit, H.M.1    Simpson, W.J.2
  • 6
    • 84892126217 scopus 로고    scopus 로고
    • Soitec (2010) http://www.soitec.com/en/technology/smart-cut-smart-choice. php
    • (2010)
  • 7
    • 17644447585 scopus 로고    scopus 로고
    • Substrate transfer: Enabling technology for RF applications
    • Dig. Techn. P., San Francisco, 2003
    • Dekker R et al. (2003) Substrate transfer: enabling technology for RF applications. International electron device meeting (IEDM) Dig. Techn. P., San Francisco, pp 371-374, 2003
    • (2003) International Electron Device Meeting (IEDM) , pp. 371-374
    • Dekker, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.