Erratum: Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy (Applied Physics Letters (2013) 103 (032102))

Applied Physics Letters

Volumn 103, Issue 26, 2013, Pages

  Brochen, Stéphane ^a   Brault, Julien ^a   Chenot, Sébastien ^a   Dussaigne, Amélie ^a   Leroux, Mathieu ^a   Damilano, Benjamin ^a  

^a CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84891599084     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4858978     Document Type: Erratum

References (1)

1. S. Brochen, J. Brault, S. Chenot, A. Dussaigne, M. Leroux, and B. Damilano, Appl. Phys. Lett. 103, 032102 (2013). 10.1063/1.4813598