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1
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0017483078
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The interdigitated back contact solar cell: A silicon solar cell for use in concentrated sunlight
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Apr.
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M. D. Lammert and R. J. Schwartz, "The interdigitated back contact solar cell: A silicon solar cell for use in concentrated sunlight," IEEE Trans. Electron. Devices, vol. ED-24, no. 4, pp. 337-342, Apr. 1977.
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IEEE Trans. Electron. Devices
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Lammert, M.D.1
Schwartz, R.J.2
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2
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0016597088
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Silicon solar cells for high concentration applications
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presented at the Washington, DC, USA
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R. J. Schwartz and M. D. Lammert, "Silicon solar cells for high concentration applications," presented at the Int. Electron Devices Meeting, Washington, DC, USA, 1975.
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(1975)
Int. Electron Devices Meeting
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Schwartz, R.J.1
Lammert, M.D.2
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3
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84869431511
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Generation III high efficiency lower cost technology: Transition to full scale manufacturing
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presented at the Austin, TX, USA
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D. D. Smith, P. J. Cousins, A. Masad, A. Waldhauer, S. Westerberg, M. Johnson, T. Xiuwen, T. Dennis, G. Harley, G. Solomon, R. Seung, M. Shepherd, S.Harrington, M. Defensor,A. Leygo, P. Tomada,W. Junbo, T. Pass, L. Ann, L. Smith, N. Bergstrom, C. Nicdao, P. Tipones, and D. Vicente, "Generation III high efficiency lower cost technology: Transition to full scale manufacturing," presented at the 38th IEEE Photovoltaic Specialists Conf., Austin, TX, USA, 2012.
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38th IEEE Photovoltaic Specialists Conf.
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Smith, D.D.1
Cousins, P.J.2
Masad, A.3
Waldhauer, A.4
Westerberg, S.5
Johnson, M.6
Xiuwen, T.7
Dennis, T.8
Harley, G.9
Solomon, G.10
Seung, R.11
Shepherd, M.12
Harrington, S.13
Defensora. Leygo, M.14
Tomada, P.15
Junbo, W.16
Pass, T.17
Ann, L.18
Smith, L.19
Bergstrom, N.20
Nicdao, C.21
Tipones, P.22
Vicente, D.23
more..
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4
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78650090038
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Generation 3: Improved performance at lower cost
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presented at the Honolulu, HI, USA
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P. J. Cousins, D. D. Smith, H.-C. Luan, J. Manning, T. D. Dennis, A. Waldhauer, K. E. Wilson, G. Harley, and W. P. Mulligan, "Generation 3: Improved performance at lower cost," presented at the 35th IEEE Photovoltaic Specialists Conf., Honolulu, HI, USA, 2010.
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(2010)
35th IEEE Photovoltaic Specialists Conf.
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Cousins, P.J.1
Smith, D.D.2
Luan, H.-C.3
Manning, J.4
Dennis, T.D.5
Waldhauer, A.6
Wilson, K.E.7
Harley, G.8
Mulligan, W.P.9
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5
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0022795061
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27. 5-PERCENT SILICON CONCENTRATOR SOLAR CELLS
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R. A. Sinton, Y. Kwark, J. Y. Gan, and R. M. Swanson, "27.5-percent silicon concentrator solar cells," IEEE Electron. Device Lett., vol. EDL-7, no. 10, pp. 567-569, Oct. 1986. (Pubitemid 17468839)
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Electron device letters
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, Issue.10
, pp. 567-569
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Sinton, R.A.1
Kwark Young2
Gan, J.Y.3
Swanson Richard, M.4
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6
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84882868038
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M.S. Thesis, Stanford Univ., Stanford, CA, USA
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R.A. Sinton, "Device physics and characterization of silicon point-contact solar cells," M.S. Thesis, Stanford Univ., Stanford, CA, USA, 1987.
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(1987)
Device Physics and Characterization of Silicon Point-contact Solar Cells
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Sinton, R.A.1
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7
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0022313823
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Point contact solar cells: Theory and modeling
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presented at the Las Vegas, NV, USA
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R. M. Swanson, "Point contact solar cells: Theory and modeling," presented at the 18th IEEE Photovoltaic Specialists Conf., Las Vegas, NV, USA, 1985.
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(1985)
18th IEEE Photovoltaic Specialists Conf.
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Swanson, R.M.1
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8
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41749092332
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High-efficiency silicon solar cells
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K.W. B̈oer, Ed. New York, NY, USA: Plenum
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R. M. Swanson and R. A. Sinton, "High-efficiency silicon solar cells," in Advances in solar energy, vol. 6, K.W. B̈oer, Ed. New York, NY, USA: Plenum, 1990, pp. 427-84.
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(1990)
Advances in Solar Energy
, vol.6
, pp. 427-484
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Swanson, R.M.1
Sinton, R.A.2
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9
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0012423811
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Point-contact solar cells: Modeling and experiment
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R. M. Swanson, "Point-contact solar cells: Modeling and experiment," Solar Cells, vol. 17, pp. 85-118, 1986.
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(1986)
Solar Cells
, vol.17
, pp. 85-118
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Swanson, R.M.1
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11
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0022325487
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Optimized interdigitated back contact (IBC) solar cell for high concentrated sunlight
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presented at the Las Vegas, NV, USA
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P. Verlinden, F. Van de Wiele, G. Stehelin, and J. P. David, "Optimized interdigitated back contact (IBC) solar cell for high concentrated sunlight," presented at the 18th IEEE Photovoltaic Specialists Conf., Las Vegas, NV, USA, 1985.
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(1985)
18th IEEE Photovoltaic Specialists Conf.
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Verlinden, P.1
Wiele De F.Van2
Stehelin, G.3
David, J.P.4
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12
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40849106655
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Analyzing the effects of front-surface fields on back-junction silicon solar cells using the charge-collection probability and the reciprocity theorem
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M. Hermle, F. Granek, O. Schultz, and S. W. Glunz, "Analyzing the effects of front-surface fields on back-junction silicon solar cells using the charge-collection probability and the reciprocity theorem," J. Appl. Phys., vol. 103, p. 054507, 2008.
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J. Appl. Phys.
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, pp. 054507
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Hermle, M.1
Granek, F.2
Schultz, O.3
Glunz, S.W.4
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13
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75149118536
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Modeling and optimization study of industrial n-type high-efficiency back-contact back-junction silicon solar cells
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S. Kluska, F.Granek, M.R̈udiger, M. Hermle, and S. W.Glunz, "Modeling and optimization study of industrial n-type high-efficiency back-contact back-junction silicon solar cells," Sol. Energ. Mat. Sol. Cells, vol. 94, pp. 568-577, 2010.
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Sol. Energ. Mat. Sol. Cells
, vol.94
, pp. 568-577
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Kluska, S.1
Granek, F.2
R̈udiger, M.3
Hermle, M.4
Glunz, S.W.5
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14
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84891556405
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Ph.D. dissertation, Univ.Konstance,Konstanz, Germany
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P. Saint-Cast, "Passivation of Si Surfaces by PECVD Aluminum Oxide," Ph.D. dissertation, Univ.Konstance,Konstanz, Germany, 2012, pp. 79-80.
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Passivation of Si Surfaces by PECVD Aluminum Oxide
, pp. 79-80
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Saint-Cast, P.1
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15
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27944432072
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Loss analysis of crystalline silicon solar cells using photoconductance and quantum efficiency measurements
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Konstanz: Universiẗat, Konstanz, Germany
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B. Fischer, "Loss analysis of crystalline silicon solar cells using photoconductance and quantum efficiency measurements," in Physics. Konstanz: Universiẗat, Konstanz, Germany, 2003, p. 198.
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(2003)
Physics
, pp. 198
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Fischer, B.1
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16
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0022306789
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Measurement of the emitter saturation current by a contactless photoconductivity decay method (silicon solar cells)
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presented at the Las Vegas, NV, USA
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D. E. Kane and R. M. Swanson, "Measurement of the emitter saturation current by a contactless photoconductivity decay method (silicon solar cells)," presented at the 18th IEEE Photovoltaic Specialists Conf., Las Vegas, NV, USA, 1985.
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(1985)
18th IEEE Photovoltaic Specialists Conf.
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Kane, D.E.1
Swanson, R.M.2
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17
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84891555715
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Separation of recombination properties of silicon solar cells andwafers via luminescence imaging
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presented at the Hamburg, Germany
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J. A. Giesecke, M. Kasemann, and W. Warta, "Separation of recombination properties of silicon solar cells andwafers via luminescence imaging," presented at the 24th European Photovoltaic Solar Energy Conf., Hamburg, Germany, 2009.
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(2009)
24th European Photovoltaic Solar Energy Conf.
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Giesecke, J.A.1
Kasemann, M.2
Warta, W.3
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18
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84867467918
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Improved quantitative description of Auger recombination in crystalline silicon
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A. Richter, S. W. Glunz, F.Werner, J. Schmidt, and A. Cuevas, "Improved quantitative description of Auger recombination in crystalline silicon," Phys. Rev. B, vol. 86, p. 165202, 2012.
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Phys. Rev. B
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Richter, A.1
Glunz, S.W.2
Werner, F.3
Schmidt, J.4
Cuevas, A.5
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19
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84891559194
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Recombination on locally processed wafer surfaces
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P. Saint-Cast, J. Nekarda, M. Hofmann, S. Kuehnhold, and R. Preu, "Recombination on locally processed wafer surfaces," Energy Procedia, vol. 27, pp. 259-266, 2012.
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(2012)
Energy Procedia
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Saint-Cast, P.1
Nekarda, J.2
Hofmann, M.3
Kuehnhold, S.4
Preu, R.5
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21
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84855331023
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Modeling solar cells with the dopant-diffused layers treated as conductive boundaries
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R. Brendel, "Modeling solar cells with the dopant-diffused layers treated as conductive boundaries," Prog. Photov., Res. Appl., vol. 20, pp. 31-43, 2012.
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Prog. Photov., Res. Appl.
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, pp. 31-43
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Brendel, R.1
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22
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0019071879
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Resistivity-Dopant density relationship for boron-Doped silicon
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W. R. Thurber, R. L. Mattis, Y. M. Liu, and J. J. Filliben, "Resistivitydopant density relationship for boron-doped silicon," J. Electrochem. Soc., vol. 127, pp. 2291-4, 1980. (Pubitemid 11477384)
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(1980)
Journal of the Electrochemical Society
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, Issue.10
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Thurber, W.R.1
Mattis, R.L.2
Liu, Y.M.3
Filliben, J.J.4
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23
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0019045345
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Resistivity-Dopant density relationship for phosphorus-Doped silicon
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W. R. Thurber, R. L. Mattis, Y. M. Liu, and J. J. Filliben, "Resistivitydopant density relationship for phosphorus-doped silicon," J. Electrochem. Soc., vol. 127, pp. 1807-12, 1980. (Pubitemid 11444086)
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(1980)
Journal of the Electrochemical Society
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, Issue.8
, pp. 1807-1812
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Thurber, W.R.1
Mattis, R.L.2
Liu, Y.M.3
Filliben, J.J.4
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