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All chemicals are purchased from Aldrich, and used without any further purification. In a typical synthesis of CU2S nanocrystals, 1.25 mmol of ammonium diethyldithiocarbamate is mixed with 10 mL of dodecanethiol and 17 mL of oleic acid in a three-neck flask. The solution is heated up to 110 °C under Argon (Ar) flow followed by a quick injection of a suspension composed of 1 mmol of copper(11) acetylacetonate and 3 mL of oleic acid. Then, the solution is quickly heated up to 180 °C and kept at the temperature for 10-20 min. The cleaning of the nanocrystals involves multiple steps performed in a glovebox with Ar protection, and all of the solvents used are anhydrous to avoid any possible oxidation. Right after the reaction, the solution containing Gu 2S nanocrystals is cooled down naturally to 120 °C before being taken out of the flask for centrifuging at 4600 rpm for 10 min. The supernatant is discarded and the precipitation is first fully dissolved in
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3) and then passed through a 0.4 μm Teflon filter to make stock solutions for photovoltaic device fabrication.
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Glass substrates coated with 150 nm ITO (Thin Film Devices Inc, resistivity 20 ohms/sq) are cleaned by ultrasonication for ca. 30 min in an even mixture of acetone and isopropanol and then deionized water, respectively. The substrates are then dried under a stream of nitrogen followed by oxygen plasma cleaning for 15 min at 0.2 torr. A filtered dispersion of PEDOT.PSS in water (Baytron-PH) was immediately spin-cast at 4000 rpm for 1 min and then baked for 30 min at 120 °C. After cooling down, nanocrystal films are spin-cast at 600 rpm onto the substrates. To create bilayer structures, CU2S films are spin-cast first and then heated for 10 min at 150 °C to remove excess solvent and allow for spin-casting of the second films of CdS. Then, the substrates are annealed again for 5-10 min at 150 °C. After that, the substrates are held at ca. 10-7 torr for up to 12 h, after which 200 nm of top aluminum (Al) electrodes are deposited by thermal evaporation thro
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2 nominal areas. After evaporation, a rapid thermal annealing is performed on the devices at 150 °C for 30-60 seconds. The procedure of fabricating photovoltaic device on plastic substrate is same as above except ITO-coated plastic substrates (OC50, CP Films) are used to replace the regular ITO-coated glass substrates. Accordingly, the oxygen plasma cleaning time is reduced to 3.5 min.
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2 using a thermopile radiant power meter (Spectra Physics Oriel, model 70260) with fused silica window, and verified with a Hamamatsu SI787-04 diode. Intensity is controlled to be constant throughout measurements with a digital exposure controller (Spectra Physics Oriel, model 68950).
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2 using a thermopile radiant power meter (Spectra Physics Oriel, model 70260) with fused silica window, and verified with a Hamamatsu SI787-04 diode. Intensity is controlled to be constant throughout measurements with a digital exposure controller (Spectra Physics Oriel, model 68950).
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