Band structure engineering in topological insulator based heterostructures

Nano Letters

Volumn 13, Issue 12, 2013, Pages 6064-6069

  Menshchikova, T V ^a   Otrokov, M M ^a,b   Tsirkin, S S ^a,b   Samorokov, D A ^a   Bebneva, V V ^a   Ernst, A ^c,d   Kuznetsov, V M ^a   Chulkov, E V ^b,e  

^a TOMSK STATE UNIVERSITY   (Russian Federation)

^b DONOSTIA INTERNATIONAL PHYSICS CENTER DIPC   (Spain)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^d UNIVERSITY OF LEIPZIG   (Germany)

^e CENTRO MIXTO CSIC UPV EHU   (Spain)

Author keywords

electric field; electronic structure; heterostructures; Topological insulators

Indexed keywords

AB INITIO CALCULATIONS; BAND STRUCTURE ENGINEERING; CONDUCTING SURFACES; ELECTRONIC BAND STRUCTURE; EXTERNAL ELECTRIC FIELD; SIMULTANEOUS USE; TOPOLOGICAL INSULATORS; TOPOLOGICAL MATERIALS;

BAND STRUCTURE; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; HETEROJUNCTIONS; SUBSTRATES; SURFACE STATES; TOPOLOGY; ULTRATHIN FILMS;

ELECTRIC INSULATORS;

NANOMATERIAL;

ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; ELECTRONICS; SURFACE PROPERTY;

ELECTRIC CONDUCTIVITY; ELECTRONICS; NANOSTRUCTURES; SURFACE PROPERTIES;

EID: 84890325693     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl403312y     Document Type: Article

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