SCOPUS 정보 검색 플랫폼

2009 13th European Conference on Power Electronics and Applications, EPE '09

Volumn , Issue , 2009, Pages

Realization of higher output power capability with the Bi-mode Insulated Gate Transistor (BIGT)

(6) Rahimo, M a Schlapbach, U a Schnell, R a Kopta, A a Vobecky, J a Baschnagel, A a

Author keywords

Design; Device Application; Device Characterization; Free wheel diode (FWD); IGBT

Indexed keywords

COMPACT SYSTEM; DEVICE APPLICATION; DEVICE CHARACTERIZATION; ESSENTIAL CHARACTERISTIC; FREE WHEEL DIODE (FWD); FREEWHEELING DIODES; FUTURE APPLICATIONS; HIGH VOLTAGE APPLICATIONS; IGBT; INSULATED GATE; OUTPUT POWER; POTENTIAL SOLUTIONS; POWER LEVELS; PRACTICAL REALIZATIONS; STATIC AND DYNAMIC; SWITCHING CONDITIONS;

DC-DC CONVERTERS; DIODES; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); PHOTOLITHOGRAPHY; POWER ELECTRONICS; WHEELS;

ACTIVE FILTERS;

EID: 72949111682 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (21)

References (8)

1
- 4944254471
- 1200V Reverse Conducting IGBT
- H. Takahashi, A. Yamamoto, S. Anon, T. Minato; "1200V Reverse Conducting IGBT" Proc. ISPSD'04, p 133.
- Proc. ISPSD'04 , pp. 133
- Takahashi, H.¹ Yamamoto, A.² Anon, S.³ Minato, T.⁴

2
- 72949105446
- 600V RC-IGBT for Drives Applications in Ultra-Thin Wafer Technology
- H. Ruthing, F. Hille, FJ Niedernostheide, HJ. Schulze, B. Brunner; "600V RC-IGBT for Drives Applications in Ultra-Thin Wafer Technology" Proc. ISPSD'06, p 89.
- Proc. ISPSD'06 , pp. 89
- Ruthing, H.¹ Hille, F.² Niedernostheide, F.J.³ Schulze, H.J.⁴ Brunner, B.⁵

3
- 72949098893
- Anode Design Variations in 1200V Trench Field-Stop RC- IGBTs
- S. Voss, FJ Niedernostheide, HJ. Schulze; "Anode Design Variations in 1200V Trench Field-Stop RC- IGBTs" Proc. ISPSD'08, p 169.
- Proc. ISPSD'08 , pp. 169
- Voss, S.¹ Niedernostheide, F.J.² Schulze, H.J.³

4
- 51549120990
- A High Current 3300V Module Employing RC- IGBTs Setting a New Benchmark in Output Power Capability
- Rahimo M. et al.; "A High Current 3300V Module Employing RC- IGBTs Setting a New Benchmark in Output Power Capability" Proc. ISPSD'08, p 68.
- Proc. ISPSD'08 , pp. 68
- Rahimo, M.¹

5
- 72949113712
- On the integration of a PIN diode and an IGBT for a specific application
- Czech Rep, p
- A. Bourennane, JL Sanchez, F. Richardeau, E. Imbernon, M. Breil; "On the integration of a PIN diode and an IGBT for a specific application" Proc. ISPS'06, Czech Rep., p 145.
- Proc. ISPS'06 , pp. 145
- Bourennane, A.¹ Sanchez, J.L.² Richardeau, F.³ Imbernon, E.⁴ Breil, M.⁵

6
- 34247480577
- A Landmark in Electrical Performance of IGBT Modules Utilising Next Generation Chip Technologies
- A. Kopta, M. Rahimo, S. Eicher, U. Schlapbach; "A Landmark in Electrical Performance of IGBT Modules Utilising Next Generation Chip Technologies" Proc. ISPSD'06, p 17.
- Proc. ISPSD'06 , pp. 17
- Kopta, A.¹ Rahimo, M.² Eicher, S.³ Schlapbach, U.⁴

7
- 0034449681
- A Newly Structured High Voltage Diode Highlighting Oscillation Free Function in Reverse Recovery
- K. Satoh et al.; "A Newly Structured High Voltage Diode Highlighting Oscillation Free Function in Reverse Recovery" Proc. ISPSD'00, p 249.
- Proc. ISPSD'00 , pp. 249
- Satoh, K.¹

8
- 72949094747
- Potential of Reverse Conducting IGBTs in Voltage Source Inverters
- Hans-Günter Eckel; "Potential of Reverse Conducting IGBTs in Voltage Source Inverters" Proc. PCIM 2009, p 334.
- (2009) Proc. PCIM , pp. 334
- Eckel, H.-G.¹

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