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Volumn 103, Issue 18, 2013, Pages

Formation of a passivating CH3NH3PbI 3/PbI2 interface during moderate heating of CH 3NH3PbI3 layers

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE SEPARATIONS; DEFECT STATE; DOPED SEMICONDUCTORS; IN-VACUUM; MODULATED SURFACES; P-TYPE;

PHYSICAL PROPERTIES; PHYSICS;

ENERGY GAP;

EID: 84889643374 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4826116 Document Type: Article

Times cited : (274)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.